ZnO based oxide system with continuous bandgap modulation from 3.7 to 4.9 eV

C. Yang; X. M. Li; Y. F. Gu; W. D. Yu; X. D. Gao; Y. W. Zhang

doi:10.1063/1.2987420

ZnO based oxide system with continuous bandgap modulation from 3.7 to 4.9 eV

C. Yang
, X. M. Li
, Y. F. Gu
, W. D. Yu
, X. D. Gao
, Y. W. Zhang

CAS - Shanghai Institute of Ceramics
University of Chinese Academy of Sciences

科研成果: 期刊稿件 › 文章 › 同行评审

90 引用（Scopus）

摘要

ZnO based oxide system Zn_1-x-yBe_xMgyO has been prepared by pulsed laser deposition. By incorporating different amounts of beryllium and magnesium into ZnO, the bandgap of ZnBeMgO has been modulated from 3.7 to 4.9 eV continuously. The crystal quality of ZnBeMgO film has been improved significantly comparing with that of either ZnMgO or BeZnO. These ZnBeMgO films are promising for fabricating high-efficiency optoelectronic devices such as solar-blind UV detectors.

源语言	英语
文章编号	112114
期刊	Applied Physics Letters
卷	93
期	11
DOI	https://doi.org/10.1063/1.2987420
出版状态	已出版 - 2008
已对外发布	是

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abstract = "ZnO based oxide system Zn1-x-yBexMgyO has been prepared by pulsed laser deposition. By incorporating different amounts of beryllium and magnesium into ZnO, the bandgap of ZnBeMgO has been modulated from 3.7 to 4.9 eV continuously. The crystal quality of ZnBeMgO film has been improved significantly comparing with that of either ZnMgO or BeZnO. These ZnBeMgO films are promising for fabricating high-efficiency optoelectronic devices such as solar-blind UV detectors.",

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AU - Yang, C.

AU - Li, X. M.

AU - Gu, Y. F.

AU - Yu, W. D.

AU - Gao, X. D.

AU - Zhang, Y. W.

PY - 2008

Y1 - 2008

N2 - ZnO based oxide system Zn1-x-yBexMgyO has been prepared by pulsed laser deposition. By incorporating different amounts of beryllium and magnesium into ZnO, the bandgap of ZnBeMgO has been modulated from 3.7 to 4.9 eV continuously. The crystal quality of ZnBeMgO film has been improved significantly comparing with that of either ZnMgO or BeZnO. These ZnBeMgO films are promising for fabricating high-efficiency optoelectronic devices such as solar-blind UV detectors.

AB - ZnO based oxide system Zn1-x-yBexMgyO has been prepared by pulsed laser deposition. By incorporating different amounts of beryllium and magnesium into ZnO, the bandgap of ZnBeMgO has been modulated from 3.7 to 4.9 eV continuously. The crystal quality of ZnBeMgO film has been improved significantly comparing with that of either ZnMgO or BeZnO. These ZnBeMgO films are promising for fabricating high-efficiency optoelectronic devices such as solar-blind UV detectors.

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ZnO based oxide system with continuous bandgap modulation from 3.7 to 4.9 eV

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