Why does AlScN Appear to be the Best Choice for IIIA-VA-based Wurtzite Ferroelectrics?

Recent discoveries of ferroelectrics in wurtzite-structured III nitrides have made AlScN a highly intriguing contender for computing and memory devices. Discovering substitutes for wurtzite nitrides with switchable polarization is very desirable. In this work, the potential for elements in the periodic table to produce stable hexagonal nitrides has been systematically investigated. The best option, according to the density-functional theory calculations, is aluminum nitride with doped with scandium. Regarding the unexpected large leakage current in AlScN, strain engineering is proposed to be a feasible way to enhance its leakage behavior.