Weak antilocalization effect in high-mobility two-dimensional electron gas in an inversion layer on p-type HgCdTe

Magnetoconductance of a gated two-dimensional electron gas (2DEG) in an inversion layer on a p-type HgCdTe film is investigated. At strong magnetic fields, characteristic features such as the quantum Hall effect of a 2DEG with single subband occupation are observed. At weak magnetic fields, the weak antilocalization effect in the ballistic regime is observed. Phase coherence time and zero-field spin-splitting are extracted following Golub's model L. E. Golub, Phys. Rev. B 71, 235310 (2005). The temperature dependence of the dephasing rate is consistent with the Nyquist mechanism.