TY - JOUR
T1 - Wafer-scale Te thin film with high hole mobility and piezoelectric coefficients
AU - Tai, Xiaochi
AU - Zhao, Qianru
AU - Chen, Yan
AU - Jiao, Hanxue
AU - Wu, Shuaiqin
AU - Zhou, Dongjie
AU - Huang, Xinning
AU - Xiong, Ke
AU - Lin, Tie
AU - Meng, Xiangjian
AU - Wang, Xudong
AU - Shen, Hong
AU - Chu, Junhao
AU - Wang, Jianlu
N1 - Publisher Copyright:
© 2024 Author(s).
PY - 2024/8/5
Y1 - 2024/8/5
N2 - p-type semiconductors are significant for integrated nanoelectronics. Tellurium (Te), a mono-elemental material, is a p-type semiconductor with high mobility. Its outstanding performance renders it widely applicable in the fields of electronics and optoelectronics. However, the wafer-scale fabrication of Te thin films is challenging. In this study, we reported an ion-bean sputtered Te thin film and investigated the effects of annealing temperatures. Annealing-induced crystallization kinetics were assessed through Raman spectroscopy, x-ray diffraction, and atomic force microscopy. After annealing, the film's conductivity increased from 10−5 to 10−4 S and mobility from 18 to 53 cm2 V−1 s−1. Dual AC resonance tracking switching spectroscopy piezoelectric force microscopy is used to investigate piezo/ferroelectric properties. The coercive voltages are −2 and 4 V respectively, and the effective piezoelectric coefficient (d33) is 40 pm/V. Butterfly and phase-switching loops demonstrate its possible ferroelectricity. The Te thin film has potential applications in optoelectronics, nonvolatile memory devices, and neuromorphic computation.
AB - p-type semiconductors are significant for integrated nanoelectronics. Tellurium (Te), a mono-elemental material, is a p-type semiconductor with high mobility. Its outstanding performance renders it widely applicable in the fields of electronics and optoelectronics. However, the wafer-scale fabrication of Te thin films is challenging. In this study, we reported an ion-bean sputtered Te thin film and investigated the effects of annealing temperatures. Annealing-induced crystallization kinetics were assessed through Raman spectroscopy, x-ray diffraction, and atomic force microscopy. After annealing, the film's conductivity increased from 10−5 to 10−4 S and mobility from 18 to 53 cm2 V−1 s−1. Dual AC resonance tracking switching spectroscopy piezoelectric force microscopy is used to investigate piezo/ferroelectric properties. The coercive voltages are −2 and 4 V respectively, and the effective piezoelectric coefficient (d33) is 40 pm/V. Butterfly and phase-switching loops demonstrate its possible ferroelectricity. The Te thin film has potential applications in optoelectronics, nonvolatile memory devices, and neuromorphic computation.
UR - https://www.scopus.com/pages/publications/85200709304
U2 - 10.1063/5.0209710
DO - 10.1063/5.0209710
M3 - 文章
AN - SCOPUS:85200709304
SN - 0003-6951
VL - 125
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 6
M1 - 062103
ER -