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Voltage-controlled change of MIS reflectivity in visible and near infrared band

  • CAS - Shanghai Institute of Technical Physics

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

Voltage-induced reflective changes of Pt/BLT/Si and Pt/STO/Si are investigated in visible and near infrared band. A theoretic calculation of inversion layer plasmons is set up. The most sensitive optical band and the voltage value interval causing fastest change rate are indicated. Some variance regularities are described, and this study provides the basically theoretical support for the application of an optical readout infrared imaging device: MFIS.

源语言英语
主期刊名Sixth International Conference on Thin Film Physics and Applications
DOI
出版状态已出版 - 2008
已对外发布
活动6th International Conference on Thin Film Physics and Applications, TFPA 2007 - Shanghai, 中国
期限: 25 9月 200728 9月 2007

出版系列

姓名Proceedings of SPIE - The International Society for Optical Engineering
6984
ISSN(印刷版)0277-786X

会议

会议6th International Conference on Thin Film Physics and Applications, TFPA 2007
国家/地区中国
Shanghai
时期25/09/0728/09/07

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