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Ultra-Broadband and Polarization-Sensitive TaPdTe5-Based Photodetectors from Visible to Terahertz Wavelength

  • Qiyuan Zhang
  • , Zejun Wang
  • , Guanghui Peng
  • , Siyuan Lei
  • , Chengyu Leng
  • , Pan Li
  • , Yingjian Ren
  • , Wei Zhou
  • , Xiangzhou Tian
  • , Junhao Chu
  • , Zhiming Huang*
  • *此作品的通讯作者
  • CAS - Shanghai Institute of Technical Physics
  • University of Chinese Academy of Sciences
  • Anhui University
  • Shanghai University
  • ShanghaiTech University
  • Fudan University

科研成果: 期刊稿件文章同行评审

摘要

Polarization-sensitive photodetectors operating from ultraviolet to terahertz (THz) can acquire more multidimensional information compared to conventional PDs, making them ideal for complex applications like military and environmental monitoring. However, most topology-based photodetectors are based on two-dimensional (2D) or three-dimensional (3D) systems, and quasi-one-dimensional (quasi-1D) topological crystals combining polarization sensitivity with ultrabroadband detection remain scarce. Here, we demonstrate a quasi-1D topological semimetal, TaPdTe5, for high-performance photodetection spanning visible to THz bands. Topological TaPdTe5 not only possesses an extremely rare and highly in-plane anisotropic structure, but also the TaPdTe5-based photodetector exhibits excellent comprehensive photoelectric performance (extremely low noise-equivalent power of 0.0174 pW·Hz–1/2 at 0.0896 THz, ultrafast response times of 47.8 μs at 808 nm and 1.3 μs at 0.0896 THz) and environmental stability. Owing to its low-symmetry crystal structure and dipole antenna effects, the TaPdTe5-based photodetector shows polarization-dependent response across visible, infrared, and THz wavelengths, achieving an extremely high extinction ratio of 128 at 25.2 GHz. Furthermore, the TaPdTe5 photodetector is successfully deployed for high-resolution, fast THz imaging applications at room temperature. Our findings highlight TaPdTe5 as a promising quasi-1D topological semimetal for next-generation multifunctional ultrabroadband optoelectronic devices.

源语言英语
页(从-至)12949-12961
页数13
期刊ACS Applied Materials and Interfaces
18
8
DOI
出版状态已出版 - 4 3月 2026
已对外发布

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