Tuning of the metal-insulator transition in electrolyte-gated NdNiO 3 thin films

S. Asanuma; P. H. Xiang; H. Yamada; H. Sato; I. H. Inoue; H. Akoh; A. Sawa; K. Ueno; H. Shimotani; H. Yuan; M. Kawasaki; Y. Iwasa

doi:10.1063/1.3496458

Tuning of the metal-insulator transition in electrolyte-gated NdNiO ₃ thin films

S. Asanuma
, P. H. Xiang
, H. Yamada
, H. Sato
, I. H. Inoue
, H. Akoh
, A. Sawa^*
, K. Ueno
, H. Shimotani
, H. Yuan
, M. Kawasaki
, Y. Iwasa

^*此作品的通讯作者

National Institute of Advanced Industrial Science and Technology
Japan Science and Technology Agency
Tohoku University
The University of Tokyo
RIKEN

科研成果: 期刊稿件 › 文章 › 同行评审

106 引用（Scopus）

摘要

We demonstrate electrostatic control of the metal-insulator transition in the typical correlated-electron material NdNiO₃ through a large effective capacitance of the electric double layer at the electrolyte/NdNiO ₃ interface. The metal-insulator transition temperature (TMI) of NdNiO₃ is shown to decrease drastically with increasing hole concentration through the application of a negative gate voltage (V _G). The shift in TMI (Δ TMI) is larger for thinner NdNiO ₃; for VG of -2.5 V, Δ TMI of 5-nm-thick NdNiO₃ is as large as 40 K, and the resistivity change near 95 K is one order of magnitude. This study may be potentially applicable to Mott transistor devices.

源语言	英语
期刊论文编号	142110
期刊	Applied Physics Letters
卷	97
期	14
DOI	https://doi.org/10.1063/1.3496458
出版状态	已出版 - 4 10月 2010
已对外发布	是

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title = "Tuning of the metal-insulator transition in electrolyte-gated NdNiO 3 thin films",

abstract = "We demonstrate electrostatic control of the metal-insulator transition in the typical correlated-electron material NdNiO3 through a large effective capacitance of the electric double layer at the electrolyte/NdNiO 3 interface. The metal-insulator transition temperature (TMI) of NdNiO3 is shown to decrease drastically with increasing hole concentration through the application of a negative gate voltage (V G). The shift in TMI (Δ TMI) is larger for thinner NdNiO 3; for VG of -2.5 V, Δ TMI of 5-nm-thick NdNiO3 is as large as 40 K, and the resistivity change near 95 K is one order of magnitude. This study may be potentially applicable to Mott transistor devices.",

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T1 - Tuning of the metal-insulator transition in electrolyte-gated NdNiO 3 thin films

AU - Asanuma, S.

AU - Xiang, P. H.

AU - Yamada, H.

AU - Sato, H.

AU - Inoue, I. H.

AU - Akoh, H.

AU - Sawa, A.

AU - Ueno, K.

AU - Shimotani, H.

AU - Yuan, H.

AU - Kawasaki, M.

AU - Iwasa, Y.

PY - 2010/10/4

Y1 - 2010/10/4

N2 - We demonstrate electrostatic control of the metal-insulator transition in the typical correlated-electron material NdNiO3 through a large effective capacitance of the electric double layer at the electrolyte/NdNiO 3 interface. The metal-insulator transition temperature (TMI) of NdNiO3 is shown to decrease drastically with increasing hole concentration through the application of a negative gate voltage (V G). The shift in TMI (Δ TMI) is larger for thinner NdNiO 3; for VG of -2.5 V, Δ TMI of 5-nm-thick NdNiO3 is as large as 40 K, and the resistivity change near 95 K is one order of magnitude. This study may be potentially applicable to Mott transistor devices.

AB - We demonstrate electrostatic control of the metal-insulator transition in the typical correlated-electron material NdNiO3 through a large effective capacitance of the electric double layer at the electrolyte/NdNiO 3 interface. The metal-insulator transition temperature (TMI) of NdNiO3 is shown to decrease drastically with increasing hole concentration through the application of a negative gate voltage (V G). The shift in TMI (Δ TMI) is larger for thinner NdNiO 3; for VG of -2.5 V, Δ TMI of 5-nm-thick NdNiO3 is as large as 40 K, and the resistivity change near 95 K is one order of magnitude. This study may be potentially applicable to Mott transistor devices.

UR - https://www.scopus.com/pages/publications/77958036049

U2 - 10.1063/1.3496458

DO - 10.1063/1.3496458

M3 - 文章

AN - SCOPUS:77958036049

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 142110

ER -

Tuning of the metal-insulator transition in electrolyte-gated NdNiO 3 thin films

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Tuning of the metal-insulator transition in electrolyte-gated NdNiO ₃ thin films