Tuner-based and F50 Measurement of HEMT Noise Parameters Determining

In this paper, we discuss the tuner-based measurement and $\mathrm{F}_{50}$ method for characterizing four noise parameters of HEMT devices. General processes and requirements demanded for each method are introduced and compared. The noise parameters obtained by the two extraction methods shows similar results for 70 nm HEMT with 50 μm gatewidth in the frequency range 8-50GHz. The results indicate that both methods have their own advantages and disadvantages while maintaining accuracy. Based on the F50 noise parameter extraction method, an improvement direction has been proposed to reduce parameter extraction and optimize the process. Great usability is demonstrated for determination of noise parameters characterization.