Tunable electroluminescence in planar graphene/sio2 memristors

Congli He; Jiafang Li; Xing Wu; Peng Chen; Jing Zhao; Kuibo Yin; Meng Cheng; Wei Yang; Guibai Xie; Duoming Wang; Donghua Liu; Rong Yang; Dongxia Shi; Zhiyuan Li; Litao Sun; Guangyu Zhang

doi:10.1002/adma.201302447

Tunable electroluminescence in planar graphene/sio₂ memristors

Congli He
, Jiafang Li
, Xing Wu
, Peng Chen
, Jing Zhao
, Kuibo Yin
, Meng Cheng
, Wei Yang
, Guibai Xie
, Duoming Wang
, Donghua Liu
, Rong Yang
, Dongxia Shi
, Zhiyuan Li
, Litao Sun
, Guangyu Zhang^*

^*此作品的通讯作者

CAS - Institute of Physics
Southeast University, Nanjing

科研成果: 期刊稿件 › 文章 › 同行评审

82 引用（Scopus）

摘要

Electroluminescence and resistive switching are first realized simultaneously in graphene/SiO₂ memristor devices. The electroluminescence peaks can be tuned between 550 nm and 770 nm reliably via setting the device to different resistance states by applying different voltages. The combination of resistive switching and electroluminescence may bring new functionalities for these memristor devices which are fully compatible with silicon-based electronics.

源语言	英语
页（从-至）	5593-5598
页数	6
期刊	Advanced Materials
卷	25
期	39
DOI	https://doi.org/10.1002/adma.201302447
出版状态	已出版 - 18 10月 2013
已对外发布	是

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title = "Tunable electroluminescence in planar graphene/sio2 memristors",

abstract = "Electroluminescence and resistive switching are first realized simultaneously in graphene/SiO2 memristor devices. The electroluminescence peaks can be tuned between 550 nm and 770 nm reliably via setting the device to different resistance states by applying different voltages. The combination of resistive switching and electroluminescence may bring new functionalities for these memristor devices which are fully compatible with silicon-based electronics.",

keywords = "Si nanocrystals, electroluminescence, graphene/SiO nanogap devices, memristor",

author = "Congli He and Jiafang Li and Xing Wu and Peng Chen and Jing Zhao and Kuibo Yin and Meng Cheng and Wei Yang and Guibai Xie and Duoming Wang and Donghua Liu and Rong Yang and Dongxia Shi and Zhiyuan Li and Litao Sun and Guangyu Zhang",

year = "2013",

month = oct,

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doi = "10.1002/adma.201302447",

language = "英语",

volume = "25",

pages = "5593--5598",

journal = "Advanced Materials",

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T1 - Tunable electroluminescence in planar graphene/sio2 memristors

AU - He, Congli

AU - Li, Jiafang

AU - Wu, Xing

AU - Chen, Peng

AU - Zhao, Jing

AU - Yin, Kuibo

AU - Cheng, Meng

AU - Yang, Wei

AU - Xie, Guibai

AU - Wang, Duoming

AU - Liu, Donghua

AU - Yang, Rong

AU - Shi, Dongxia

AU - Li, Zhiyuan

AU - Sun, Litao

AU - Zhang, Guangyu

PY - 2013/10/18

Y1 - 2013/10/18

N2 - Electroluminescence and resistive switching are first realized simultaneously in graphene/SiO2 memristor devices. The electroluminescence peaks can be tuned between 550 nm and 770 nm reliably via setting the device to different resistance states by applying different voltages. The combination of resistive switching and electroluminescence may bring new functionalities for these memristor devices which are fully compatible with silicon-based electronics.

AB - Electroluminescence and resistive switching are first realized simultaneously in graphene/SiO2 memristor devices. The electroluminescence peaks can be tuned between 550 nm and 770 nm reliably via setting the device to different resistance states by applying different voltages. The combination of resistive switching and electroluminescence may bring new functionalities for these memristor devices which are fully compatible with silicon-based electronics.

KW - Si nanocrystals

KW - electroluminescence

KW - graphene/SiO nanogap devices

KW - memristor

UR - https://www.scopus.com/pages/publications/84886241502

U2 - 10.1002/adma.201302447

DO - 10.1002/adma.201302447

M3 - 文章

AN - SCOPUS:84886241502

SN - 0935-9648

VL - 25

SP - 5593

EP - 5598

JO - Advanced Materials

JF - Advanced Materials

IS - 39

ER -

Tunable electroluminescence in planar graphene/sio2 memristors

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Tunable electroluminescence in planar graphene/sio₂ memristors