Transport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures

Bo Shen; Ning Tang; Jie Lu; Zewei Zheng; Dunjun Chen; Yongsheng Gui; Qiu Zhijun; Chunping Jiang; Shaoling Guo; Junhao Chu; Rong Zhang; Youdou Zheng

Transport properties of the two-dimensional electron gas in Al _xGa_1-xN/GaN heterostructures

Bo Shen^*
, Ning Tang
, Jie Lu
, Zewei Zheng
, Dunjun Chen
, Yongsheng Gui
, Qiu Zhijun
, Chunping Jiang
, Shaoling Guo
, Junhao Chu
, Rong Zhang
, Youdou Zheng

^*此作品的通讯作者

Nanjing University
CAS - Shanghai Institute of Technical Physics

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

摘要

Magnetotransport properties of modulation-doped Al_xGa _1-xN/GaN heterostructures were studied at low temperatures and high magnetic fields. The strong Shubnikov-de Mass oscillations with the double periodicity is clearly observed, indicating the two-dimensional electron gas (2DEG) occupation of the double subbands in the triangular quantum well at the heterointerfaces. It is determined that the 2DEG occupation of the double subbands occurs when the 2DEG sheet concentration reaches 9.0 × 10 ¹²cm^-2, and the energy separation between the first and the second subbands is 75 meV. The quantum scattering time related to the first subband is determined to be 8.4 × 10^-14 s. The mobilities of the 2DEG in the first and the second subbands, magnetointersubband scattering oscillations of the 2DEG, and the spin splitting of the 2DEG have also been studied.

源语言	英语
主期刊名	Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
编辑	X.P. Qu, G.P. Ru, B.Z. Li, B. Mizuno, H. Iwai
出版商	Institute of Electrical and Electronics Engineers Inc.
页	166-170
页数	5
卷	4
ISBN（印刷版）	7309039157
出版状态	已出版 - 2004
已对外发布	是
活动	Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 - Shanghai, 中国期限: 15 3月 2004 → 16 3月 2004

会议

会议	Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
国家/地区	中国
市	Shanghai
时期	15/03/04 → 16/03/04

其它文件与链接

链接到 Scopus 的出版物

引用此

Shen, B., Tang, N., Lu, J., Zheng, Z., Chen, D., Gui, Y., Zhijun, Q., Jiang, C., Guo, S., Chu, J., Zhang, R., & Zheng, Y. (2004). Transport properties of the two-dimensional electron gas in Al _xGa_1-xN/GaN heterostructures. 在 X. P. Qu, G. P. Ru, B. Z. Li, B. Mizuno, & H. Iwai (编辑), Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 (卷 4, 页码 166-170). Institute of Electrical and Electronics Engineers Inc..

@inproceedings{11f550cb4852499e8af8625ddd880587,

title = "Transport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures",

abstract = "Magnetotransport properties of modulation-doped AlxGa 1-xN/GaN heterostructures were studied at low temperatures and high magnetic fields. The strong Shubnikov-de Mass oscillations with the double periodicity is clearly observed, indicating the two-dimensional electron gas (2DEG) occupation of the double subbands in the triangular quantum well at the heterointerfaces. It is determined that the 2DEG occupation of the double subbands occurs when the 2DEG sheet concentration reaches 9.0 × 10 12cm-2, and the energy separation between the first and the second subbands is 75 meV. The quantum scattering time related to the first subband is determined to be 8.4 × 10-14 s. The mobilities of the 2DEG in the first and the second subbands, magnetointersubband scattering oscillations of the 2DEG, and the spin splitting of the 2DEG have also been studied.",

author = "Bo Shen and Ning Tang and Jie Lu and Zewei Zheng and Dunjun Chen and Yongsheng Gui and Qiu Zhijun and Chunping Jiang and Shaoling Guo and Junhao Chu and Rong Zhang and Youdou Zheng",

year = "2004",

language = "英语",

isbn = "7309039157",

volume = "4",

pages = "166--170",

editor = "X.P. Qu and G.P. Ru and B.Z. Li and B. Mizuno and H. Iwai",

booktitle = "Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "美国",

note = "Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 ; Conference date: 15-03-2004 Through 16-03-2004",

}

Shen, B, Tang, N, Lu, J, Zheng, Z, Chen, D, Gui, Y, Zhijun, Q, Jiang, C, Guo, S, Chu, J, Zhang, R & Zheng, Y 2004, Transport properties of the two-dimensional electron gas in Al _xGa_1-xN/GaN heterostructures. 在 XP Qu, GP Ru, BZ Li, B Mizuno & H Iwai (编辑), Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. 卷 4, Institute of Electrical and Electronics Engineers Inc., 页码 166-170, Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004, Shanghai, 中国, 15/03/04.

Transport properties of the two-dimensional electron gas in Al _xGa_1-xN/GaN heterostructures. / Shen, Bo; Tang, Ning; Lu, Jie 等.
Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. 编辑 / X.P. Qu; G.P. Ru; B.Z. Li; B. Mizuno; H. Iwai. 卷 4 Institute of Electrical and Electronics Engineers Inc., 2004. 页码 166-170.

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

TY - GEN

T1 - Transport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures

AU - Shen, Bo

AU - Tang, Ning

AU - Lu, Jie

AU - Zheng, Zewei

AU - Chen, Dunjun

AU - Gui, Yongsheng

AU - Zhijun, Qiu

AU - Jiang, Chunping

AU - Guo, Shaoling

AU - Chu, Junhao

AU - Zhang, Rong

AU - Zheng, Youdou

PY - 2004

Y1 - 2004

N2 - Magnetotransport properties of modulation-doped AlxGa 1-xN/GaN heterostructures were studied at low temperatures and high magnetic fields. The strong Shubnikov-de Mass oscillations with the double periodicity is clearly observed, indicating the two-dimensional electron gas (2DEG) occupation of the double subbands in the triangular quantum well at the heterointerfaces. It is determined that the 2DEG occupation of the double subbands occurs when the 2DEG sheet concentration reaches 9.0 × 10 12cm-2, and the energy separation between the first and the second subbands is 75 meV. The quantum scattering time related to the first subband is determined to be 8.4 × 10-14 s. The mobilities of the 2DEG in the first and the second subbands, magnetointersubband scattering oscillations of the 2DEG, and the spin splitting of the 2DEG have also been studied.

AB - Magnetotransport properties of modulation-doped AlxGa 1-xN/GaN heterostructures were studied at low temperatures and high magnetic fields. The strong Shubnikov-de Mass oscillations with the double periodicity is clearly observed, indicating the two-dimensional electron gas (2DEG) occupation of the double subbands in the triangular quantum well at the heterointerfaces. It is determined that the 2DEG occupation of the double subbands occurs when the 2DEG sheet concentration reaches 9.0 × 10 12cm-2, and the energy separation between the first and the second subbands is 75 meV. The quantum scattering time related to the first subband is determined to be 8.4 × 10-14 s. The mobilities of the 2DEG in the first and the second subbands, magnetointersubband scattering oscillations of the 2DEG, and the spin splitting of the 2DEG have also been studied.

UR - https://www.scopus.com/pages/publications/3543077649

M3 - 会议稿件

AN - SCOPUS:3543077649

SN - 7309039157

VL - 4

SP - 166

EP - 170

BT - Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004

A2 - Qu, X.P.

A2 - Ru, G.P.

A2 - Li, B.Z.

A2 - Mizuno, B.

A2 - Iwai, H.

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004

Y2 - 15 March 2004 through 16 March 2004

ER -

Transport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures

摘要

会议

其它文件与链接

学术指纹

引用此

Transport properties of the two-dimensional electron gas in Al _xGa_1-xN/GaN heterostructures