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Transient decay of photoexcited carriers and photoluminescence efficiency in quantum wells

  • Shi Rong Jin*
  • , Ai Zhen Li
  • , Jun Hao Chu
  • , Shi Wei Chen
  • *此作品的通讯作者
  • CAS - Shanghai Institute of Microsystem and Information Technology
  • CAS - Shanghai Institute of Technical Physics

科研成果: 期刊稿件文章同行评审

摘要

We present a phenomenological model for the recombination of photoexcited carriers in quantum wells, which takes into account of the nonradiative recombination and the screening effect of free carriers in the wells. The results show, that the decay time of photoluminescence is strongly related to the sample quality, doping level, as well as the excitation intensity.

源语言英语
页(从-至)1009-1010
页数2
期刊Wuli Xuebao/Acta Physica Sinica
46
5
出版状态已出版 - 5月 1997
已对外发布

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