Topology paving the way to controllable readout of ferroelectricity —self-assembled topologically confined domain walls become the key to ferroelectric memory

Chungang Duan

doi:10.1016/j.jmat.2018.11.005

Topology paving the way to controllable readout of ferroelectricity —self-assembled topologically confined domain walls become the key to ferroelectric memory

Chungang Duan

物理与电子科学学院

科研成果: 期刊稿件 › 文章 › 同行评审

1 引用（Scopus）

源语言	英语
页（从-至）	49-50
页数	2
期刊	Journal of Materiomics
卷	5
期	1
DOI	https://doi.org/10.1016/j.jmat.2018.11.005
出版状态	已出版 - 3月 2019

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10.1016/j.jmat.2018.11.005

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