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Topologically Engineered High-Q Quasi-BIC Metasurfaces for Enhanced Near-Infrared Emission in PbS Quantum Dots

  • Jiaoyang Guo
  • , Rong Jin
  • , Zhenchu Fu
  • , Yukang Zhang
  • , Feilong Yu
  • , Jin Chen
  • , Xingjun Wang*
  • , Lujun Huang
  • , Chaobiao Zhou*
  • , Xiaoshuang Chen
  • , Wei Lu
  • , Guanhai Li*
  • *此作品的通讯作者
  • CAS - Shanghai Institute of Technical Physics
  • University of Chinese Academy of Sciences
  • University of Shanghai for Science and Technology
  • Guizhou Minzu University
  • Shanghai Research Center for Quantum Sciences

科研成果: 期刊稿件文章同行评审

摘要

Enhancing photoluminescence (PL) efficiency in colloidal quantum dots is pivotal for next-generation near-infrared photodetectors, imaging systems, and photonic devices. Conventional methods, especially metal-based plasmonic structures, suffer from large optical losses, which limits their practical use. Here, we introduce a quasi-bound state in the continuum (quasi-BIC) metasurface on a silicon-on-insulator platform, tailored to provide high-quality factor resonances with minimized losses. Utilizing topological charge engineering and controlled in-plane asymmetry in silicon cylinder arrays, we developed a robust quasi-BIC capable of maintaining a high Q factor across a broad angular range, achieving an experimental Q factor of 3031 at normal incidence. This approach significantly enhances near-field interactions, achieving a ≤110-fold increase in PL for PbS quantum dots at 33 K and a 41-fold enhancement at room temperature. Our findings offer a scalable, cost-effective solution for enhancing light emission in advanced optoelectronic applications.

源语言英语
页(从-至)2357-2365
页数9
期刊Nano Letters
25
6
DOI
出版状态已出版 - 12 2月 2025

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