Thin film field-effect phototransistors from bandgap-tunable, solution-processed, few-layer reduced graphene oxide films

Haixin Chang; Zhenhua Sun; Qinghong Yuan; Feng Ding; Xiaoming Tao; Feng Yan; Zijian Zheng

doi:10.1002/adma.201002229

Thin film field-effect phototransistors from bandgap-tunable, solution-processed, few-layer reduced graphene oxide films

Haixin Chang
, Zhenhua Sun
, Qinghong Yuan
, Feng Ding
, Xiaoming Tao
, Feng Yan^*
, Zijian Zheng

^*此作品的通讯作者

Hong Kong Polytechnic University

科研成果: 期刊稿件 › 文章 › 同行评审

177 引用（Scopus）

摘要

Thin film field-effect phototransistors (FETs) can be developed from bandgap-tunable, solution-processed, few-layer reduced graphene oxide (FRGO) films. Large-area FRGO films with tunable bandgaps ranging from 2.2 eV to 0.5 eV can be achieved readily by solution-processing technique such as spin-coating. The electronic and optoelectronic properties of FRGO FETs are found to be closely related to their bandgap energy. The resulting phototransistor has great application potential in the field of photodetection.

源语言	英语
页（从-至）	4872-4876
页数	5
期刊	Advanced Materials
卷	22
期	43
DOI	https://doi.org/10.1002/adma.201002229
出版状态	已出版 - 16 11月 2010
已对外发布	是

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title = "Thin film field-effect phototransistors from bandgap-tunable, solution-processed, few-layer reduced graphene oxide films",

abstract = "Thin film field-effect phototransistors (FETs) can be developed from bandgap-tunable, solution-processed, few-layer reduced graphene oxide (FRGO) films. Large-area FRGO films with tunable bandgaps ranging from 2.2 eV to 0.5 eV can be achieved readily by solution-processing technique such as spin-coating. The electronic and optoelectronic properties of FRGO FETs are found to be closely related to their bandgap energy. The resulting phototransistor has great application potential in the field of photodetection.",

keywords = "bandgap, field-effect, graphene, phototransistor, solution processable",

author = "Haixin Chang and Zhenhua Sun and Qinghong Yuan and Feng Ding and Xiaoming Tao and Feng Yan and Zijian Zheng",

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T1 - Thin film field-effect phototransistors from bandgap-tunable, solution-processed, few-layer reduced graphene oxide films

AU - Chang, Haixin

AU - Sun, Zhenhua

AU - Yuan, Qinghong

AU - Ding, Feng

AU - Tao, Xiaoming

AU - Yan, Feng

AU - Zheng, Zijian

PY - 2010/11/16

Y1 - 2010/11/16

N2 - Thin film field-effect phototransistors (FETs) can be developed from bandgap-tunable, solution-processed, few-layer reduced graphene oxide (FRGO) films. Large-area FRGO films with tunable bandgaps ranging from 2.2 eV to 0.5 eV can be achieved readily by solution-processing technique such as spin-coating. The electronic and optoelectronic properties of FRGO FETs are found to be closely related to their bandgap energy. The resulting phototransistor has great application potential in the field of photodetection.

AB - Thin film field-effect phototransistors (FETs) can be developed from bandgap-tunable, solution-processed, few-layer reduced graphene oxide (FRGO) films. Large-area FRGO films with tunable bandgaps ranging from 2.2 eV to 0.5 eV can be achieved readily by solution-processing technique such as spin-coating. The electronic and optoelectronic properties of FRGO FETs are found to be closely related to their bandgap energy. The resulting phototransistor has great application potential in the field of photodetection.

KW - bandgap

KW - field-effect

KW - graphene

KW - phototransistor

KW - solution processable

UR - https://www.scopus.com/pages/publications/78449293089

U2 - 10.1002/adma.201002229

DO - 10.1002/adma.201002229

M3 - 文章

C2 - 20827686

AN - SCOPUS:78449293089

SN - 0935-9648

VL - 22

SP - 4872

EP - 4876

JO - Advanced Materials

JF - Advanced Materials

IS - 43

ER -

Thin film field-effect phototransistors from bandgap-tunable, solution-processed, few-layer reduced graphene oxide films

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