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Thermally Induced Voids and Delamination in Cu RDL: Experimental and Simulation Study

  • Peng Xu
  • , Lan Li
  • , Yu Yao
  • , Weikai Shi
  • , Jiang Xia
  • , Zongyi Li
  • , Zuoyuan Dong*
  • , Xing Wu
  • *此作品的通讯作者
  • East China Normal University
  • Ltd.
  • Peking University

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

摘要

This work addresses the thermal reliability of multilayer copper (Cu) redistribution layers (RDLs). Scanning electron microscopy (SEM) and energy-dispersive spectroscopy (EDS) analyses were employed to investigate the morphology and elemental distribution of Cu interconnects and polyimide (PI) layers, as well as to observe void formation and interfacial delamination under multi-stage thermal loading. Stress simulation of the RDL structure reveals significantly higher stress in Cu regions than in PI, closely linked to void nucleation and interfacial failure. The findings highlight thermal stress mismatch and local stress concentration as key drivers of degradation, providing valuable insights for assessing the reliability of high-density RDL and optimizing integrated circuit (IC) packaging.

源语言英语
主期刊名2026 Conference of Science and Technology of Integrated Circuits, CSTIC 2026
编辑Cor Claeys, Bin Yu, Beichao Zhang, Peng Bai, Qianqian Huang, Xiaowei Li, Steve X. Liang, Hsiang-Lan Lung, Linyong Pang, Xinping Qu, Xiaoping Shi, Jianshi Tang, Pingqiang Zhou, Cheng Zhuo
出版商Institute of Electrical and Electronics Engineers Inc.
ISBN(电子版)9798331592745
DOI
出版状态已出版 - 2026
活动2026 Conference of Science and Technology of Integrated Circuits, CSTIC 2026 - Shanghai, 中国
期限: 22 3月 2026 → 24 3月 2026

丛书

姓名2026 Conference of Science and Technology of Integrated Circuits, CSTIC 2026

会议

会议2026 Conference of Science and Technology of Integrated Circuits, CSTIC 2026
国家/地区中国
市Shanghai
时期22/03/26 → 24/03/26

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