@inproceedings{81eff73bf74f4a468f8a7393de560192,
title = "Thermal stability of VSe2 investigated by in situ transmission electron microscope",
abstract = "Two-dimensional (2D) materials with the ultrathin morphology and versatile electronic properties are promising candidates for the advanced electronics. The metallic 2D vanadium diselenide (VSe2) with high conductivity could be applied as the electrode material for 2D-material-based sensors and transistors. Due to the atomically thin structure, the thermal stability of the 2D material is critical for both device fabrication and reliable application. However, the understanding of the failure mechanism is deficient. This work presents a mechanism of thermal induced defect that is not reported by in situ thermal transmission electron microscope. Different from 2H-MoS2 that generates vacancies, the 1T-VSe2 presents phase transition from VSe2 to V2Se9 at 300 °C, and the phase transition is irreversible. This work offers the experimental support for the new understanding of thermal stability of 2D materials.",
keywords = "Thermal stability, in situ transmission electron microscope, phase transition, two-dimensional material, vanadium diselenide",
author = "Changqing Ye and Dongming Liu and Junhao Shen and Hengchang Bi and Xing Wu and Chaolun Wang",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023 ; Conference date: 24-07-2023 Through 27-07-2023",
year = "2023",
doi = "10.1109/IPFA58228.2023.10249189",
language = "英语",
series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2023",
address = "美国",
}