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Theoretical and experimental study on femtosecond laser induced damage in CaF2 crystals

  • T. Q. Jia*
  • , X. X. Li
  • , D. H. Feng
  • , C. F. Cheng
  • , R. X. Li
  • , H. Chen
  • , Z. Z. Xu
  • *此作品的通讯作者
  • CAS - Shanghai Institute of Optics and Fine Mechanics
  • Sun Yat-Sen University
  • Tongji University

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

We report on the damage threshold in CaF2 crystals induced by femtosecond laser at wavelengths of 800 nm and 400 nm, respectively. The dependences of ablation depths and ablation volumes on laser fluences are also presented. We investigate theoretically the coupling constants between phonon and conduction band electrons (CBE), and calculate the rates of CBE absorbing laser energy. A theoretical model including CBE production, laser energy deposition, and CBE diffusion is applied to study the damage mechanisms. Our results indicate that energy diffusion greatly influences damage threshold and ablation depth.

源语言英语
页(从-至)645-649
页数5
期刊Applied Physics A: Materials Science and Processing
卷81
期3
DOI
出版状态已出版 - 8月 2005
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