The study of optimal oxidation time and different temperatures for high quality VO                         2                          thin film based on the sputtering oxidation coupling method

Xiaofeng Xu; Xinfeng He; Gang Wang; Xiaolong Yuan; Xingxing Liu; Haiyan Huang; Sheng Yao; Huaizhong Xing; Xiaoshuang Chen; Junhao Chu

doi:10.1016/j.apsusc.2011.04.068

The study of optimal oxidation time and different temperatures for high quality VO ₂ thin film based on the sputtering oxidation coupling method

Xiaofeng Xu^*
, Xinfeng He
, Gang Wang
, Xiaolong Yuan
, Xingxing Liu
, Haiyan Huang
, Sheng Yao
, Huaizhong Xing
, Xiaoshuang Chen
, Junhao Chu

^*此作品的通讯作者

Donghua University
CAS - Shanghai Institute of Technical Physics

科研成果: 期刊稿件 › 文章 › 同行评审

27 引用（Scopus）

摘要

The high quality Vanadium dioxide (VO ₂ ) thin films have been fabricated successfully on sapphire by a simple novel sputtering oxidation coupling (SOC) method. All VO ₂ thin film samples exhibit a good metal-insulator transition (MIT) at about 340 K. The optimal oxidation time at different temperatures has been experimentally investigated. We report on the relationship between optimal oxidation time and different temperatures of metal vanadium thin film samples of 101 nm thickness by oxidation in air. It is found that the optimal oxidation time ln(t) as a function of temperature 1/T shows a significant linear relationship among 703 K-783 K, in good agreement with the Wagner's high-temperature oxidation model.

源语言	英语
页（从-至）	8824-8827
页数	4
期刊	Applied Surface Science
卷	257
期	21
DOI	https://doi.org/10.1016/j.apsusc.2011.04.068
出版状态	已出版 - 15 8月 2011
已对外发布	是

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10.1016/j.apsusc.2011.04.068

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Xu, X., He, X., Wang, G., Yuan, X., Liu, X., Huang, H., Yao, S., Xing, H., Chen, X., & Chu, J. (2011). The study of optimal oxidation time and different temperatures for high quality VO ₂ thin film based on the sputtering oxidation coupling method Applied Surface Science, 257(21), 8824-8827. https://doi.org/10.1016/j.apsusc.2011.04.068

@article{dae7e2aeae554fdf9a9fefbfee42b21d,

title = " The study of optimal oxidation time and different temperatures for high quality VO 2 thin film based on the sputtering oxidation coupling method ",

abstract = " The high quality Vanadium dioxide (VO 2 ) thin films have been fabricated successfully on sapphire by a simple novel sputtering oxidation coupling (SOC) method. All VO 2 thin film samples exhibit a good metal-insulator transition (MIT) at about 340 K. The optimal oxidation time at different temperatures has been experimentally investigated. We report on the relationship between optimal oxidation time and different temperatures of metal vanadium thin film samples of 101 nm thickness by oxidation in air. It is found that the optimal oxidation time ln(t) as a function of temperature 1/T shows a significant linear relationship among 703 K-783 K, in good agreement with the Wagner's high-temperature oxidation model.",

keywords = "Optimal oxidation time, Sputtering oxidation coupling, Temperature, Vanadium dioxide",

author = "Xiaofeng Xu and Xinfeng He and Gang Wang and Xiaolong Yuan and Xingxing Liu and Haiyan Huang and Sheng Yao and Huaizhong Xing and Xiaoshuang Chen and Junhao Chu",

year = "2011",

month = aug,

day = "15",

doi = "10.1016/j.apsusc.2011.04.068",

language = "英语",

volume = "257",

pages = "8824--8827",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "21",

}

Xu, X, He, X, Wang, G, Yuan, X, Liu, X, Huang, H, Yao, S, Xing, H, Chen, X & Chu, J 2011, ' The study of optimal oxidation time and different temperatures for high quality VO ₂ thin film based on the sputtering oxidation coupling method ', Applied Surface Science, 卷 257, 号码 21, 页码 8824-8827. https://doi.org/10.1016/j.apsusc.2011.04.068

The study of optimal oxidation time and different temperatures for high quality VO ₂ thin film based on the sputtering oxidation coupling method . / Xu, Xiaofeng; He, Xinfeng; Wang, Gang 等.
在: Applied Surface Science, 卷 257, 号码 21, 15.08.2011, 页码 8824-8827.

科研成果: 期刊稿件 › 文章 › 同行评审

TY - JOUR

T1 - The study of optimal oxidation time and different temperatures for high quality VO 2 thin film based on the sputtering oxidation coupling method

AU - Xu, Xiaofeng

AU - He, Xinfeng

AU - Wang, Gang

AU - Yuan, Xiaolong

AU - Liu, Xingxing

AU - Huang, Haiyan

AU - Yao, Sheng

AU - Xing, Huaizhong

AU - Chen, Xiaoshuang

AU - Chu, Junhao

PY - 2011/8/15

Y1 - 2011/8/15

N2 - The high quality Vanadium dioxide (VO 2 ) thin films have been fabricated successfully on sapphire by a simple novel sputtering oxidation coupling (SOC) method. All VO 2 thin film samples exhibit a good metal-insulator transition (MIT) at about 340 K. The optimal oxidation time at different temperatures has been experimentally investigated. We report on the relationship between optimal oxidation time and different temperatures of metal vanadium thin film samples of 101 nm thickness by oxidation in air. It is found that the optimal oxidation time ln(t) as a function of temperature 1/T shows a significant linear relationship among 703 K-783 K, in good agreement with the Wagner's high-temperature oxidation model.

AB - The high quality Vanadium dioxide (VO 2 ) thin films have been fabricated successfully on sapphire by a simple novel sputtering oxidation coupling (SOC) method. All VO 2 thin film samples exhibit a good metal-insulator transition (MIT) at about 340 K. The optimal oxidation time at different temperatures has been experimentally investigated. We report on the relationship between optimal oxidation time and different temperatures of metal vanadium thin film samples of 101 nm thickness by oxidation in air. It is found that the optimal oxidation time ln(t) as a function of temperature 1/T shows a significant linear relationship among 703 K-783 K, in good agreement with the Wagner's high-temperature oxidation model.

KW - Optimal oxidation time

KW - Sputtering oxidation coupling

KW - Temperature

KW - Vanadium dioxide

UR - https://www.scopus.com/pages/publications/79960168121

U2 - 10.1016/j.apsusc.2011.04.068

DO - 10.1016/j.apsusc.2011.04.068

M3 - 文章

AN - SCOPUS:79960168121

SN - 0169-4332

VL - 257

SP - 8824

EP - 8827

JO - Applied Surface Science

JF - Applied Surface Science

IS - 21

ER -

Xu X, He X, Wang G, Yuan X, Liu X, Huang H 等. The study of optimal oxidation time and different temperatures for high quality VO ₂ thin film based on the sputtering oxidation coupling method Applied Surface Science. 2011 8月 15;257(21):8824-8827. doi: 10.1016/j.apsusc.2011.04.068

The study of optimal oxidation time and different temperatures for high quality VO 2 thin film based on the sputtering oxidation coupling method

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The study of optimal oxidation time and different temperatures for high quality VO ₂ thin film based on the sputtering oxidation coupling method