The studies of RT electrical resistivities of LaNiO3-δ thin films by R.F. magnetron sputtering with different percentage of oxygen partial pressure at various substrate temperatures

X. D. Zhang; X. J. Meng; J. L. Sun; G. S. Wang; T. Lin; J. H. Chu

doi:10.1117/12.607751

The studies of RT electrical resistivities of LaNiO_3-δ thin films by R.F. magnetron sputtering with different percentage of oxygen partial pressure at various substrate temperatures

X. D. Zhang^*
, X. J. Meng
, J. L. Sun
, G. S. Wang
, T. Lin
, J. H. Chu

^*此作品的通讯作者

CAS - Shanghai Institute of Technical Physics

科研成果: 期刊稿件 › 会议文章 › 同行评审

摘要

Electrically conductive LaNiO_3-δ thin film with perovskite-type structure were deposited on Si(100)/n substrates by rf magnetron sputtering at substrate temperature 200°C , 300°C, 450°C, 600°C with a series of 0%, 20%, 40%, 60% oxygen partial pressure respectively. The La₂NiO₄ and NiO peak of XRD are not observed. The RT resistivity of LNO films decreases with the decreasing substrate temperature at a fixed oxygen partial pressure and with increasing oxygen partial pressure at a fixed substrate temperature.

源语言	英语
文章编号	52
页（从-至）	228-231
页数	4
期刊	Proceedings of SPIE - The International Society for Optical Engineering
卷	5774
DOI	https://doi.org/10.1117/12.607751
出版状态	已出版 - 2005
已对外发布	是
活动	Fifth International Conference on Thin Film Physics and Applications - Shanghai, 中国期限: 31 5月 2004 → 2 6月 2004

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10.1117/12.607751

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Zhang, X. D., Meng, X. J., Sun, J. L., Wang, G. S., Lin, T., & Chu, J. H. (2005). The studies of RT electrical resistivities of LaNiO_3-δ thin films by R.F. magnetron sputtering with different percentage of oxygen partial pressure at various substrate temperatures. Proceedings of SPIE - The International Society for Optical Engineering, 5774, 228-231. 文章 52. https://doi.org/10.1117/12.607751

@article{045d772501904a65936eea0f382d6156,

title = "The studies of RT electrical resistivities of LaNiO3-δ thin films by R.F. magnetron sputtering with different percentage of oxygen partial pressure at various substrate temperatures",

abstract = "Electrically conductive LaNiO3-δ thin film with perovskite-type structure were deposited on Si(100)/n substrates by rf magnetron sputtering at substrate temperature 200°C , 300°C, 450°C, 600°C with a series of 0\%, 20\%, 40\%, 60\% oxygen partial pressure respectively. The La2NiO4 and NiO peak of XRD are not observed. The RT resistivity of LNO films decreases with the decreasing substrate temperature at a fixed oxygen partial pressure and with increasing oxygen partial pressure at a fixed substrate temperature.",

keywords = "4-point probe, LaNiO thin film, RF magnetron sputtering",

author = "Zhang, \{X. D.\} and Meng, \{X. J.\} and Sun, \{J. L.\} and Wang, \{G. S.\} and T. Lin and Chu, \{J. H.\}",

year = "2005",

doi = "10.1117/12.607751",

language = "英语",

volume = "5774",

pages = "228--231",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Fifth International Conference on Thin Film Physics and Applications ; Conference date: 31-05-2004 Through 02-06-2004",

}

Zhang, XD, Meng, XJ, Sun, JL, Wang, GS, Lin, T & Chu, JH 2005, 'The studies of RT electrical resistivities of LaNiO_3-δ thin films by R.F. magnetron sputtering with different percentage of oxygen partial pressure at various substrate temperatures', Proceedings of SPIE - The International Society for Optical Engineering, 卷 5774, 52, 页码 228-231. https://doi.org/10.1117/12.607751

The studies of RT electrical resistivities of LaNiO_3-δ thin films by R.F. magnetron sputtering with different percentage of oxygen partial pressure at various substrate temperatures. / Zhang, X. D.; Meng, X. J.; Sun, J. L. 等.
在: Proceedings of SPIE - The International Society for Optical Engineering, 卷 5774, 52, 2005, 页码 228-231.

科研成果: 期刊稿件 › 会议文章 › 同行评审

TY - JOUR

T1 - The studies of RT electrical resistivities of LaNiO3-δ thin films by R.F. magnetron sputtering with different percentage of oxygen partial pressure at various substrate temperatures

AU - Zhang, X. D.

AU - Meng, X. J.

AU - Sun, J. L.

AU - Wang, G. S.

AU - Lin, T.

AU - Chu, J. H.

PY - 2005

Y1 - 2005

N2 - Electrically conductive LaNiO3-δ thin film with perovskite-type structure were deposited on Si(100)/n substrates by rf magnetron sputtering at substrate temperature 200°C , 300°C, 450°C, 600°C with a series of 0%, 20%, 40%, 60% oxygen partial pressure respectively. The La2NiO4 and NiO peak of XRD are not observed. The RT resistivity of LNO films decreases with the decreasing substrate temperature at a fixed oxygen partial pressure and with increasing oxygen partial pressure at a fixed substrate temperature.

AB - Electrically conductive LaNiO3-δ thin film with perovskite-type structure were deposited on Si(100)/n substrates by rf magnetron sputtering at substrate temperature 200°C , 300°C, 450°C, 600°C with a series of 0%, 20%, 40%, 60% oxygen partial pressure respectively. The La2NiO4 and NiO peak of XRD are not observed. The RT resistivity of LNO films decreases with the decreasing substrate temperature at a fixed oxygen partial pressure and with increasing oxygen partial pressure at a fixed substrate temperature.

KW - 4-point probe

KW - LaNiO thin film

KW - RF magnetron sputtering

UR - https://www.scopus.com/pages/publications/25644460120

U2 - 10.1117/12.607751

DO - 10.1117/12.607751

M3 - 会议文章

AN - SCOPUS:25644460120

SN - 0277-786X

VL - 5774

SP - 228

EP - 231

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 52

T2 - Fifth International Conference on Thin Film Physics and Applications

Y2 - 31 May 2004 through 2 June 2004

ER -

The studies of RT electrical resistivities of LaNiO3-δ thin films by R.F. magnetron sputtering with different percentage of oxygen partial pressure at various substrate temperatures

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The studies of RT electrical resistivities of LaNiO_3-δ thin films by R.F. magnetron sputtering with different percentage of oxygen partial pressure at various substrate temperatures