The SiPM with bulk quenching resistor: Progress at NDL and applications in Raman spectroscopy

X. B. Hu; C. Z. Hu; D. P. Yin; L. Y. Zhang; C. N. Zhang; Y. Chen; G. Q. Zhang; R. Yang; K. Liang; Yu Musienko; D. J. Han

doi:10.1016/j.nima.2011.11.007

The SiPM with bulk quenching resistor: Progress at NDL and applications in Raman spectroscopy

X. B. Hu
, C. Z. Hu
, D. P. Yin
, L. Y. Zhang
, C. N. Zhang
, Y. Chen
, G. Q. Zhang
, R. Yang
, K. Liang
, Yu Musienko
, D. J. Han^*

^*此作品的通讯作者

Beijing Normal University
Institute for Nuclear Research of the Russian Academy of Sciences

科研成果: 期刊稿件 › 文章 › 同行评审

5 引用（Scopus）

摘要

The SiPMs with quenching resistors integrated into bulk epitaxial silicon have been investigated at the Novel Device Laboratory (NDL), Beijing Normal University, China. The aim is to alleviate the conflict between the high photon detection efficiency (PDE) and high APD cell density or dynamic range encountered by conventional SiPM so that this promising detector can be applied where both large dynamic range and high PDE are required simultaneously. We report herein the latest progresses on the SiPM with 10 ⁴/mm ² micro-cell density and 0.5 mm×0.5 mm, 1 mm×1 mm as well as 20 μm×1.8 mm effective area, which have been designed and fabricated at NDL. Application of the strip SiPM with a gated photon counting technique on the measurement of TNT Raman spectroscopy is demonstrated, and the feasibility for extending SiPMs in conjunction with Nuclear Instrumentation Modules (NIM) based electronics to the field of ultra-weak spectroscopy is verified.

源语言	英语
页（从-至）	29-34
页数	6
期刊	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
卷	695
DOI	https://doi.org/10.1016/j.nima.2011.11.007
出版状态	已出版 - 11 12月 2012
已对外发布	是

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Hu, X. B., Hu, C. Z., Yin, D. P., Zhang, L. Y., Zhang, C. N., Chen, Y., Zhang, G. Q., Yang, R., Liang, K., Musienko, Y., & Han, D. J. (2012). The SiPM with bulk quenching resistor: Progress at NDL and applications in Raman spectroscopy. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 695, 29-34. https://doi.org/10.1016/j.nima.2011.11.007

@article{c7fafd35b99a4bdab17044d175e426e8,

title = "The SiPM with bulk quenching resistor: Progress at NDL and applications in Raman spectroscopy",

abstract = "The SiPMs with quenching resistors integrated into bulk epitaxial silicon have been investigated at the Novel Device Laboratory (NDL), Beijing Normal University, China. The aim is to alleviate the conflict between the high photon detection efficiency (PDE) and high APD cell density or dynamic range encountered by conventional SiPM so that this promising detector can be applied where both large dynamic range and high PDE are required simultaneously. We report herein the latest progresses on the SiPM with 10 4/mm 2 micro-cell density and 0.5 mm×0.5 mm, 1 mm×1 mm as well as 20 μm×1.8 mm effective area, which have been designed and fabricated at NDL. Application of the strip SiPM with a gated photon counting technique on the measurement of TNT Raman spectroscopy is demonstrated, and the feasibility for extending SiPMs in conjunction with Nuclear Instrumentation Modules (NIM) based electronics to the field of ultra-weak spectroscopy is verified.",

keywords = "Bulk quenching resistor, MPPC, Raman spectroscopy, SiPM, Silicon photomultipliers",

author = "Hu, \{X. B.\} and Hu, \{C. Z.\} and Yin, \{D. P.\} and Zhang, \{L. Y.\} and Zhang, \{C. N.\} and Y. Chen and Zhang, \{G. Q.\} and R. Yang and K. Liang and Yu Musienko and Han, \{D. J.\}",

year = "2012",

month = dec,

day = "11",

doi = "10.1016/j.nima.2011.11.007",

language = "英语",

volume = "695",

pages = "29--34",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier B.V.",

}

Hu, XB, Hu, CZ, Yin, DP, Zhang, LY, Zhang, CN, Chen, Y, Zhang, GQ, Yang, R, Liang, K, Musienko, Y & Han, DJ 2012, 'The SiPM with bulk quenching resistor: Progress at NDL and applications in Raman spectroscopy', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 卷 695, 页码 29-34. https://doi.org/10.1016/j.nima.2011.11.007

TY - JOUR

T1 - The SiPM with bulk quenching resistor

T2 - Progress at NDL and applications in Raman spectroscopy

AU - Hu, X. B.

AU - Hu, C. Z.

AU - Yin, D. P.

AU - Zhang, L. Y.

AU - Zhang, C. N.

AU - Chen, Y.

AU - Zhang, G. Q.

AU - Yang, R.

AU - Liang, K.

AU - Musienko, Yu

AU - Han, D. J.

PY - 2012/12/11

Y1 - 2012/12/11

N2 - The SiPMs with quenching resistors integrated into bulk epitaxial silicon have been investigated at the Novel Device Laboratory (NDL), Beijing Normal University, China. The aim is to alleviate the conflict between the high photon detection efficiency (PDE) and high APD cell density or dynamic range encountered by conventional SiPM so that this promising detector can be applied where both large dynamic range and high PDE are required simultaneously. We report herein the latest progresses on the SiPM with 10 4/mm 2 micro-cell density and 0.5 mm×0.5 mm, 1 mm×1 mm as well as 20 μm×1.8 mm effective area, which have been designed and fabricated at NDL. Application of the strip SiPM with a gated photon counting technique on the measurement of TNT Raman spectroscopy is demonstrated, and the feasibility for extending SiPMs in conjunction with Nuclear Instrumentation Modules (NIM) based electronics to the field of ultra-weak spectroscopy is verified.

AB - The SiPMs with quenching resistors integrated into bulk epitaxial silicon have been investigated at the Novel Device Laboratory (NDL), Beijing Normal University, China. The aim is to alleviate the conflict between the high photon detection efficiency (PDE) and high APD cell density or dynamic range encountered by conventional SiPM so that this promising detector can be applied where both large dynamic range and high PDE are required simultaneously. We report herein the latest progresses on the SiPM with 10 4/mm 2 micro-cell density and 0.5 mm×0.5 mm, 1 mm×1 mm as well as 20 μm×1.8 mm effective area, which have been designed and fabricated at NDL. Application of the strip SiPM with a gated photon counting technique on the measurement of TNT Raman spectroscopy is demonstrated, and the feasibility for extending SiPMs in conjunction with Nuclear Instrumentation Modules (NIM) based electronics to the field of ultra-weak spectroscopy is verified.

KW - Bulk quenching resistor

KW - MPPC

KW - Raman spectroscopy

KW - SiPM

KW - Silicon photomultipliers

UR - https://www.scopus.com/pages/publications/84867852996

U2 - 10.1016/j.nima.2011.11.007

DO - 10.1016/j.nima.2011.11.007

M3 - 文章

AN - SCOPUS:84867852996

SN - 0168-9002

VL - 695

SP - 29

EP - 34

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

ER -

The SiPM with bulk quenching resistor: Progress at NDL and applications in Raman spectroscopy

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