The role of gap states on energy level alignment at an α-NPD/HAT(CN)6 charge generation interface

Jin Peng Yang; Fabio Bussolotti; Yan Qing Li; Xiang Hua Zeng; Satoshi Kera; Jian Xin Tang; Nobuo Ueno

doi:10.1016/j.orgel.2015.05.033

The role of gap states on energy level alignment at an α-NPD/HAT(CN)₆ charge generation interface

Jin Peng Yang^*
, Fabio Bussolotti
, Yan Qing Li
, Xiang Hua Zeng
, Satoshi Kera
, Jian Xin Tang
, Nobuo Ueno

^*此作品的通讯作者

Chiba University
Yangzhou University
National Institutes of Natural Sciences - Institute for Molecular Science
Soochow University

科研成果: 期刊稿件 › 文章 › 同行评审

25 引用（Scopus）

摘要

We report the effect of gap states on energy level alignment in a typical organic charge generation interface of N,N-bis(1-naphthyl)-N,N-diphenyl-1,1-biphenyl-4,4-diamine (α-NPD)/hexaazatriphenylene-hexacarbonitrile [HAT(CN)₆] by using ultraviolet and X-ray photoemission spectroscopy. The gap states tailed from the highest occupied molecular orbital (HOMO) onset of α-NPD dominate the Fermi level pinning at the α-NPD(<1.6 nm)/HAT(CN)₆ interface, which is favorable for charges generation upon bias operation and facilitates the electron injection from the HOMO-tail region of α-NPD to the lowest unoccupied molecular orbital (LUMO) region of HAT(CN)₆.

源语言	英语
页（从-至）	120-124
页数	5
期刊	Organic Electronics
卷	24
DOI	https://doi.org/10.1016/j.orgel.2015.05.033
出版状态	已出版 - 3 6月 2015
已对外发布	是

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@article{46cbb60a13a8416db9a007d116ea2c30,

title = "The role of gap states on energy level alignment at an α-NPD/HAT(CN)6 charge generation interface",

abstract = "We report the effect of gap states on energy level alignment in a typical organic charge generation interface of N,N-bis(1-naphthyl)-N,N-diphenyl-1,1-biphenyl-4,4-diamine (α-NPD)/hexaazatriphenylene-hexacarbonitrile [HAT(CN)6] by using ultraviolet and X-ray photoemission spectroscopy. The gap states tailed from the highest occupied molecular orbital (HOMO) onset of α-NPD dominate the Fermi level pinning at the α-NPD(<1.6 nm)/HAT(CN)6 interface, which is favorable for charges generation upon bias operation and facilitates the electron injection from the HOMO-tail region of α-NPD to the lowest unoccupied molecular orbital (LUMO) region of HAT(CN)6.",

keywords = "Charge generation layer, Energy level alignment, Gap states, Ultraviolet photoelectron spectroscopy",

author = "Yang, \{Jin Peng\} and Fabio Bussolotti and Li, \{Yan Qing\} and Zeng, \{Xiang Hua\} and Satoshi Kera and Tang, \{Jian Xin\} and Nobuo Ueno",

year = "2015",

month = jun,

day = "3",

doi = "10.1016/j.orgel.2015.05.033",

language = "英语",

volume = "24",

pages = "120--124",

journal = "Organic Electronics",

issn = "1566-1199",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - The role of gap states on energy level alignment at an α-NPD/HAT(CN)6 charge generation interface

AU - Yang, Jin Peng

AU - Bussolotti, Fabio

AU - Li, Yan Qing

AU - Zeng, Xiang Hua

AU - Kera, Satoshi

AU - Tang, Jian Xin

AU - Ueno, Nobuo

PY - 2015/6/3

Y1 - 2015/6/3

N2 - We report the effect of gap states on energy level alignment in a typical organic charge generation interface of N,N-bis(1-naphthyl)-N,N-diphenyl-1,1-biphenyl-4,4-diamine (α-NPD)/hexaazatriphenylene-hexacarbonitrile [HAT(CN)6] by using ultraviolet and X-ray photoemission spectroscopy. The gap states tailed from the highest occupied molecular orbital (HOMO) onset of α-NPD dominate the Fermi level pinning at the α-NPD(<1.6 nm)/HAT(CN)6 interface, which is favorable for charges generation upon bias operation and facilitates the electron injection from the HOMO-tail region of α-NPD to the lowest unoccupied molecular orbital (LUMO) region of HAT(CN)6.

AB - We report the effect of gap states on energy level alignment in a typical organic charge generation interface of N,N-bis(1-naphthyl)-N,N-diphenyl-1,1-biphenyl-4,4-diamine (α-NPD)/hexaazatriphenylene-hexacarbonitrile [HAT(CN)6] by using ultraviolet and X-ray photoemission spectroscopy. The gap states tailed from the highest occupied molecular orbital (HOMO) onset of α-NPD dominate the Fermi level pinning at the α-NPD(<1.6 nm)/HAT(CN)6 interface, which is favorable for charges generation upon bias operation and facilitates the electron injection from the HOMO-tail region of α-NPD to the lowest unoccupied molecular orbital (LUMO) region of HAT(CN)6.

KW - Charge generation layer

KW - Energy level alignment

KW - Gap states

KW - Ultraviolet photoelectron spectroscopy

UR - https://www.scopus.com/pages/publications/84930649295

U2 - 10.1016/j.orgel.2015.05.033

DO - 10.1016/j.orgel.2015.05.033

M3 - 文章

AN - SCOPUS:84930649295

SN - 1566-1199

VL - 24

SP - 120

EP - 124

JO - Organic Electronics

JF - Organic Electronics

ER -

The role of gap states on energy level alignment at an α-NPD/HAT(CN)6 charge generation interface

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The role of gap states on energy level alignment at an α-NPD/HAT(CN)₆ charge generation interface