摘要
Raman measurements were performed on ZnO single crystals before and after implantation with N+, O+, Si+, and Ga+ ions. It is found that the broad Raman band at 576 cm-1 appears in all spectra of implanted ZnO, independent of the ion species, and thus it is attributed to disorder-activated Raman scattering. Two extra peaks at 275 and 510 cm-1 are observed only in Raman spectrum of N+-implanted ZnO. The dependence of intensity on doses indicates that the origin of these two modes is different from that of 576 cm-1 peak. We assign the additional modes to N+-related local vibrational modes.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 502-504 |
| 页数 | 3 |
| 期刊 | Solid State Communications |
| 卷 | 138 |
| 期 | 10-11 |
| DOI | |
| 出版状态 | 已出版 - 6月 2006 |
指纹
探究 'The origin of additional modes in Raman spectra of N+-implanted ZnO' 的科研主题。它们共同构成独一无二的指纹。引用此
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