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The origin of additional modes in Raman spectra of N+-implanted ZnO

  • Jianguo Yu
  • , Huaizhong Xing
  • , Qiang Zhao
  • , Huibing Mao
  • , Ye Shen
  • , Jiqing Wang*
  • , Zongsheng Lai
  • , Ziqiang Zhu
  • *此作品的通讯作者
  • East China Normal University
  • Donghua University
  • CAS - Shanghai Institute of Technical Physics

科研成果: 期刊稿件文章同行评审

摘要

Raman measurements were performed on ZnO single crystals before and after implantation with N+, O+, Si+, and Ga+ ions. It is found that the broad Raman band at 576 cm-1 appears in all spectra of implanted ZnO, independent of the ion species, and thus it is attributed to disorder-activated Raman scattering. Two extra peaks at 275 and 510 cm-1 are observed only in Raman spectrum of N+-implanted ZnO. The dependence of intensity on doses indicates that the origin of these two modes is different from that of 576 cm-1 peak. We assign the additional modes to N+-related local vibrational modes.

源语言英语
页(从-至)502-504
页数3
期刊Solid State Communications
138
10-11
DOI
出版状态已出版 - 6月 2006

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