The Nanoscale Electrical Damage Mechanism of GeSbTe Phase-Change Films Discovered by Conductive Atomic Force Microscopy

Xionghu Xu; Ming Li; Shubing Li; Anyang Cui; Menghan Deng; Kai Jiang; Liangqing Zhu; Liyan Shang; Junhao Chu; Zhigao Hu

doi:10.1109/LED.2023.3237230

The Nanoscale Electrical Damage Mechanism of GeSbTe Phase-Change Films Discovered by Conductive Atomic Force Microscopy

Xionghu Xu
, Ming Li
, Shubing Li
, Anyang Cui
, Menghan Deng
, Kai Jiang
, Liangqing Zhu^*
, Liyan Shang
, Junhao Chu
, Zhigao Hu^*

^*此作品的通讯作者

East China Normal University
Shanxi University

科研成果: 期刊稿件 › 文章 › 同行评审

2 引用（Scopus）

摘要

We study the nanoscale electrical damage of Ge2Sb2Te5 (GST) phase-change films during crystallization by conductive atomic force microscopy (C-AFM) and Raman spectra. Amorphous GST ( a -GST) can be converted to crystalline GST ( c -GST) by applying an exciting direct current (DC) bias (8 V) between the tip and the GST surface. Furthermore, as film thickness increased, the electrical-induced region of GST films revealed a gradual increase in electrical damage and improved crystallinity. It shows that GST films with a thickness of 70 nm have a better crystallization ratio of 20.5 % and less electrical damage with a volume expansion rate of 19.1±6.5%.

源语言	英语
页（从-至）	488-491
页数	4
期刊	IEEE Electron Device Letters
卷	44
期	3
DOI	https://doi.org/10.1109/LED.2023.3237230
出版状态	已出版 - 1 3月 2023
已对外发布	是

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title = "The Nanoscale Electrical Damage Mechanism of GeSbTe Phase-Change Films Discovered by Conductive Atomic Force Microscopy",

abstract = "We study the nanoscale electrical damage of Ge2Sb2Te5 (GST) phase-change films during crystallization by conductive atomic force microscopy (C-AFM) and Raman spectra. Amorphous GST ( a -GST) can be converted to crystalline GST ( c -GST) by applying an exciting direct current (DC) bias (8 V) between the tip and the GST surface. Furthermore, as film thickness increased, the electrical-induced region of GST films revealed a gradual increase in electrical damage and improved crystallinity. It shows that GST films with a thickness of 70 nm have a better crystallization ratio of 20.5 \% and less electrical damage with a volume expansion rate of 19.1±6.5\%.",

keywords = "C-AFM, GST films, Joule heat, crystallinity, phase-change",

author = "Xionghu Xu and Ming Li and Shubing Li and Anyang Cui and Menghan Deng and Kai Jiang and Liangqing Zhu and Liyan Shang and Junhao Chu and Zhigao Hu",

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doi = "10.1109/LED.2023.3237230",

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AU - Xu, Xionghu

AU - Li, Ming

AU - Li, Shubing

AU - Cui, Anyang

AU - Deng, Menghan

AU - Jiang, Kai

AU - Zhu, Liangqing

AU - Shang, Liyan

AU - Chu, Junhao

AU - Hu, Zhigao

PY - 2023/3/1

Y1 - 2023/3/1

N2 - We study the nanoscale electrical damage of Ge2Sb2Te5 (GST) phase-change films during crystallization by conductive atomic force microscopy (C-AFM) and Raman spectra. Amorphous GST ( a -GST) can be converted to crystalline GST ( c -GST) by applying an exciting direct current (DC) bias (8 V) between the tip and the GST surface. Furthermore, as film thickness increased, the electrical-induced region of GST films revealed a gradual increase in electrical damage and improved crystallinity. It shows that GST films with a thickness of 70 nm have a better crystallization ratio of 20.5 % and less electrical damage with a volume expansion rate of 19.1±6.5%.

AB - We study the nanoscale electrical damage of Ge2Sb2Te5 (GST) phase-change films during crystallization by conductive atomic force microscopy (C-AFM) and Raman spectra. Amorphous GST ( a -GST) can be converted to crystalline GST ( c -GST) by applying an exciting direct current (DC) bias (8 V) between the tip and the GST surface. Furthermore, as film thickness increased, the electrical-induced region of GST films revealed a gradual increase in electrical damage and improved crystallinity. It shows that GST films with a thickness of 70 nm have a better crystallization ratio of 20.5 % and less electrical damage with a volume expansion rate of 19.1±6.5%.

KW - C-AFM

KW - GST films

KW - Joule heat

KW - crystallinity

KW - phase-change

UR - https://www.scopus.com/pages/publications/85147263346

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DO - 10.1109/LED.2023.3237230

M3 - 文章

AN - SCOPUS:85147263346

SN - 0741-3106

VL - 44

SP - 488

EP - 491

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

ER -

The Nanoscale Electrical Damage Mechanism of GeSbTe Phase-Change Films Discovered by Conductive Atomic Force Microscopy

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