The investigations of characteristics of Sb₂Te as a base phase-change material

Chalcogenide alloys are paid much attention in the study of nonvolatile phase-change memory (PCM). A comprehensive research is investigated on Sb₂Te (ST), a base material, from properties to performances in this paper. For the characteristics of ST films, the sheet resistance is extremely stable during cooling process in resistance-temperature measurement and the thickness change of ST film is 5.7%. However, low 10-year data retention temperature (∼55 °C) and large crystal grain are the demerits for ST. In addition, the structure characteristics show stable hexagonal phase and large grain of several hundred nanometers at crystalline state after annealing. As for electrical properties, although the ST-based PCM devices are characterized by fast operation speed of ∼20 ns, only about 8 × 10³ times of stable operation cycles can be obtained. After that, the endurance performance deteriorates gradually due to the growth of grains. About resistance drift, the drift coefficients are very small both in crystalline state and in amorphous state.