跳到主要导航 跳到搜索 跳到主要内容

The grain size effect of the Pb(Zr0.45Ti0.55)O 3 thin films deposited on LaNiO3-coated silicon by modified sol-gel process

  • S. H. Hu*
  • , G. J. Hu
  • , X. J. Meng
  • , G. S. Wang
  • , J. L. Sun
  • , S. L. Guo
  • , J. H. Chu
  • , N. Dai
  • *此作品的通讯作者

科研成果: 期刊稿件文章同行评审

摘要

Highly (1 0 0) oriented PZT thin films with different grain sizes have been deposited on an LaNiO3-coated silicon substrate by a modified sol-gel process. The growth mechanism of films with high (1 0 0) orientation and the effects of grain size on the dielectric and ferroelectric properties of the films are qualitatively discussed. Measurements of dielectric and ferroelectric properties reveal that films of large grain sizes present large relative dielectric permittivity and large remnant polarization.

源语言英语
页(从-至)109-114
页数6
期刊Journal of Crystal Growth
260
1-2
DOI
出版状态已出版 - 2 1月 2004
已对外发布

指纹

探究 'The grain size effect of the Pb(Zr0.45Ti0.55)O 3 thin films deposited on LaNiO3-coated silicon by modified sol-gel process' 的科研主题。它们共同构成独一无二的指纹。

引用此