TY - JOUR
T1 - The Fluctuation Effect of Remnant Polarization in Hf.Zr.O Capacitors at Elevated Temperatures
AU - Gao, Zhaomeng
AU - Zheng, Yunzhe
AU - Xin, Tianjiao
AU - Liu, Cheng
AU - Zhao, Qiwendong
AU - Xu, Yilin
AU - Zheng, Yonghui
AU - Lin, Xiaoling
AU - Lyu, Hangbing
AU - Cheng, Yan
N1 - Publisher Copyright:
© 2024 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
PY - 2024
Y1 - 2024
N2 - Studying the ferroelectric (FE) polarization behavior and failure mechanism of hafnia-based FE devices at varying temperatures is essential for enhancing the reliability of FE memory under real-working conditions. In this study, we investigated the remnant polarization (Pr) fluctuation during electrical cycling in Hf0.5Zr0.5O2 (HZO) capacitors at elevated temperatures. The decrease in Pr can be attributed to the formation and thickening of the tetragonal (T-) phase interface layer, which reduces the electric field applied to the orthorhombic (O-) phase layer. The subsequent increase in Pr is caused by oxygen defects and leakage current in the T-phase interface layer, raising the electric field applied to the O-FE layer. Therefore, fluctuations in the electric field applied to the O-FE layer are considered as the primary cause for Pr fluctuation. Our direct characterization of T-layers, defects, and electrical properties offers insights into assessing FE phase stability and oxygen defect evolution in fluorite-type FE materials, guiding strategies to enhance device reliability.
AB - Studying the ferroelectric (FE) polarization behavior and failure mechanism of hafnia-based FE devices at varying temperatures is essential for enhancing the reliability of FE memory under real-working conditions. In this study, we investigated the remnant polarization (Pr) fluctuation during electrical cycling in Hf0.5Zr0.5O2 (HZO) capacitors at elevated temperatures. The decrease in Pr can be attributed to the formation and thickening of the tetragonal (T-) phase interface layer, which reduces the electric field applied to the orthorhombic (O-) phase layer. The subsequent increase in Pr is caused by oxygen defects and leakage current in the T-phase interface layer, raising the electric field applied to the O-FE layer. Therefore, fluctuations in the electric field applied to the O-FE layer are considered as the primary cause for Pr fluctuation. Our direct characterization of T-layers, defects, and electrical properties offers insights into assessing FE phase stability and oxygen defect evolution in fluorite-type FE materials, guiding strategies to enhance device reliability.
KW - Hafnia-based capacitors
KW - Hf0.5Zr0.5O2 FE film
KW - polarization fluctuation
KW - temperature field.
UR - https://www.scopus.com/pages/publications/85201301360
U2 - 10.1109/LED.2024.3443619
DO - 10.1109/LED.2024.3443619
M3 - 文章
AN - SCOPUS:85201301360
SN - 0741-3106
VL - 45
SP - 1788
EP - 1791
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 10
ER -