摘要
The energy offset between the electrode Fermi level and organic semiconductor transport levels is a key parameter controlling the charge injection barrier and hence efficiency of organic electronic devices. Here, we systematically explore the effect of in situ oxygen exposure on energetics in n-type conjugated polymer P(NDI2OD-T2) films. The analysis reveals that an interfacial potential step is introduced for a series of P(NDI2OD-T2) electrode contacts, causing a nearly constant downshift of the vacuum level, while the ionization energies versus vacuum level remain constant. These findings are attributed to the establishment of a so-called double-dipole step via motion of charged molecules and will modify the charge injection barriers at electrode contact. We further demonstrate that the same behavior occurs when oxygen interacts with p-type polymer TQ1 films, indicating it is possible to be a universal effect for organic semiconductors.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 6491-6497 |
| 页数 | 7 |
| 期刊 | ACS Applied Materials and Interfaces |
| 卷 | 10 |
| 期 | 7 |
| DOI | |
| 出版状态 | 已出版 - 21 2月 2018 |
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