The effect of doping amount of Zn on the co-evaporated SnSe thin film for photovoltaic application

Fei Zhao; Junhao Chu

The effect of doping amount of Zn on the co-evaporated SnSe thin film for photovoltaic application

Fei Zhao^*
, Junhao Chu

^*此作品的通讯作者

Changzhou Institute of Technology
CAS - Shanghai Institute of Technical Physics

科研成果: 期刊稿件 › 文章 › 同行评审

3 引用（Scopus）

摘要

In this work, SnSe thin films were prepared by co-evaporation method with different Zn doping amount, and the comparative studies were carried out. Experimental results indicate that the SnSe thin film with 0.285% Zn doping amount possesses higher electron mobility (32.69 cm²V^-1s^-1), lower resistivity (1.32 Ωcm), better crystalline, larger grain size, which promotes the efficiency improvement of the SnSe thin film solar cell. The efficiency of the SnSe device is improved to 0.55% by Zn doping. These results guide better growth of SnSe thin film and contribute to the development of the SnSe thin film solar cell.

源语言	英语
页（从-至）	236-244
页数	9
期刊	Journal of Optoelectronics and Advanced Materials
卷	24
期	5-6
出版状态	已出版 - 5月 2022
已对外发布	是

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title = "The effect of doping amount of Zn on the co-evaporated SnSe thin film for photovoltaic application",

abstract = "In this work, SnSe thin films were prepared by co-evaporation method with different Zn doping amount, and the comparative studies were carried out. Experimental results indicate that the SnSe thin film with 0.285\% Zn doping amount possesses higher electron mobility (32.69 cm2V-1s-1), lower resistivity (1.32 Ωcm), better crystalline, larger grain size, which promotes the efficiency improvement of the SnSe thin film solar cell. The efficiency of the SnSe device is improved to 0.55\% by Zn doping. These results guide better growth of SnSe thin film and contribute to the development of the SnSe thin film solar cell.",

keywords = "Co-evaporation, SnSe thin film, Solar cell, Zn doping",

author = "Fei Zhao and Junhao Chu",

year = "2022",

month = may,

language = "英语",

volume = "24",

pages = "236--244",

journal = "Journal of Optoelectronics and Advanced Materials",

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publisher = "National Institute of Optoelectronics",

number = "5-6",

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TY - JOUR

T1 - The effect of doping amount of Zn on the co-evaporated SnSe thin film for photovoltaic application

AU - Zhao, Fei

AU - Chu, Junhao

PY - 2022/5

Y1 - 2022/5

N2 - In this work, SnSe thin films were prepared by co-evaporation method with different Zn doping amount, and the comparative studies were carried out. Experimental results indicate that the SnSe thin film with 0.285% Zn doping amount possesses higher electron mobility (32.69 cm2V-1s-1), lower resistivity (1.32 Ωcm), better crystalline, larger grain size, which promotes the efficiency improvement of the SnSe thin film solar cell. The efficiency of the SnSe device is improved to 0.55% by Zn doping. These results guide better growth of SnSe thin film and contribute to the development of the SnSe thin film solar cell.

AB - In this work, SnSe thin films were prepared by co-evaporation method with different Zn doping amount, and the comparative studies were carried out. Experimental results indicate that the SnSe thin film with 0.285% Zn doping amount possesses higher electron mobility (32.69 cm2V-1s-1), lower resistivity (1.32 Ωcm), better crystalline, larger grain size, which promotes the efficiency improvement of the SnSe thin film solar cell. The efficiency of the SnSe device is improved to 0.55% by Zn doping. These results guide better growth of SnSe thin film and contribute to the development of the SnSe thin film solar cell.

KW - Co-evaporation

KW - SnSe thin film

KW - Solar cell

KW - Zn doping

UR - https://www.scopus.com/pages/publications/85139754130

M3 - 文章

AN - SCOPUS:85139754130

SN - 1454-4164

VL - 24

SP - 236

EP - 244

JO - Journal of Optoelectronics and Advanced Materials

JF - Journal of Optoelectronics and Advanced Materials

IS - 5-6

ER -

The effect of doping amount of Zn on the co-evaporated SnSe thin film for photovoltaic application

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