The distribution of chemical elements in Al- or La-capped high-κ metal gate stacks

M. Bosman; Y. Zhang; C. K. Cheng; X. Li; X. Wu; K. L. Pey; C. T. Lin; Y. W. Chen; S. H. Hsu; C. H. Hsu

doi:10.1063/1.3478446

The distribution of chemical elements in Al- or La-capped high-κ metal gate stacks

M. Bosman^*
, Y. Zhang
, C. K. Cheng
, X. Li
, X. Wu
, K. L. Pey
, C. T. Lin
, Y. W. Chen
, S. H. Hsu
, C. H. Hsu

^*此作品的通讯作者

Agency for Science, Technology and Research, Singapore
Nanyang Technological University
United Microelectronics Corporation

科研成果: 期刊稿件 › 文章 › 同行评审

28 引用（Scopus）

摘要

The spatial distribution of chemical elements is studied in high- κ, metal-gated stacks applied in field effect transistors. Using the transmission electron microscope (TEM)-based analytical techniques electron energy-loss spectroscopy (EELS) and energy-dispersive x-ray spectroscopy, it is demonstrated that Al₂ O₃ and La₂ O₃ capping layers show distinctly different diffusion profiles. The importance of the EELS collection angle is discussed. Popular chemical distribution models that assume La-rich interface layers are rejected.

源语言	英语
文章编号	103504
期刊	Applied Physics Letters
卷	97
期	10
DOI	https://doi.org/10.1063/1.3478446
出版状态	已出版 - 6 9月 2010
已对外发布	是

访问文件

10.1063/1.3478446

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{1cadca798cc24fb5adcd0cdce6c577f9,

title = "The distribution of chemical elements in Al- or La-capped high-κ metal gate stacks",

abstract = "The spatial distribution of chemical elements is studied in high- κ, metal-gated stacks applied in field effect transistors. Using the transmission electron microscope (TEM)-based analytical techniques electron energy-loss spectroscopy (EELS) and energy-dispersive x-ray spectroscopy, it is demonstrated that Al2 O3 and La2 O3 capping layers show distinctly different diffusion profiles. The importance of the EELS collection angle is discussed. Popular chemical distribution models that assume La-rich interface layers are rejected.",

author = "M. Bosman and Y. Zhang and Cheng, \{C. K.\} and X. Li and X. Wu and Pey, \{K. L.\} and Lin, \{C. T.\} and Chen, \{Y. W.\} and Hsu, \{S. H.\} and Hsu, \{C. H.\}",

year = "2010",

month = sep,

day = "6",

doi = "10.1063/1.3478446",

language = "英语",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - The distribution of chemical elements in Al- or La-capped high-κ metal gate stacks

AU - Bosman, M.

AU - Zhang, Y.

AU - Cheng, C. K.

AU - Li, X.

AU - Wu, X.

AU - Pey, K. L.

AU - Lin, C. T.

AU - Chen, Y. W.

AU - Hsu, S. H.

AU - Hsu, C. H.

PY - 2010/9/6

Y1 - 2010/9/6

N2 - The spatial distribution of chemical elements is studied in high- κ, metal-gated stacks applied in field effect transistors. Using the transmission electron microscope (TEM)-based analytical techniques electron energy-loss spectroscopy (EELS) and energy-dispersive x-ray spectroscopy, it is demonstrated that Al2 O3 and La2 O3 capping layers show distinctly different diffusion profiles. The importance of the EELS collection angle is discussed. Popular chemical distribution models that assume La-rich interface layers are rejected.

AB - The spatial distribution of chemical elements is studied in high- κ, metal-gated stacks applied in field effect transistors. Using the transmission electron microscope (TEM)-based analytical techniques electron energy-loss spectroscopy (EELS) and energy-dispersive x-ray spectroscopy, it is demonstrated that Al2 O3 and La2 O3 capping layers show distinctly different diffusion profiles. The importance of the EELS collection angle is discussed. Popular chemical distribution models that assume La-rich interface layers are rejected.

UR - https://www.scopus.com/pages/publications/77956578673

U2 - 10.1063/1.3478446

DO - 10.1063/1.3478446

M3 - 文章

AN - SCOPUS:77956578673

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 103504

ER -

The distribution of chemical elements in Al- or La-capped high-κ metal gate stacks

摘要

访问文件

其它文件与链接

指纹

引用此