摘要
In this work we studied 65-nm-thick poly(vinylidene fluoride- trifluoroethylene) ferroelectric polymers films grown by Langmuir-Blodgett onto silicon substrates. Three dielectric anomalies have been unambiguously evidenced. The high temperature one near 380 K corresponds to the ferroelectric-paraelectric transition. The low temperature one near 270 K which is characterized by a relaxation is attributed to structural defects in the crystalline phase leading to inhomogeneous strains detected by x-ray diffraction. At approximately 320 K, a Debye-like relaxation is clearly evidenced. Possible origins for this later relaxation are discussed.
| 源语言 | 英语 |
|---|---|
| 文章编号 | 104113 |
| 期刊 | Journal of Applied Physics |
| 卷 | 106 |
| 期 | 10 |
| DOI | |
| 出版状态 | 已出版 - 2009 |
| 已对外发布 | 是 |
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