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The creep process of the domain switching in poly(vinylidene fluoride-trifluoroethylene) ferroelectric thin films

  • B. B. Tian*
  • , Z. H. Chen
  • , A. Q. Jiang
  • , X. L. Zhao
  • , B. L. Liu
  • , J. L. Wang
  • , L. Han
  • , Sh Sun
  • , J. L. Sun
  • , X. J. Meng
  • , J. H. Chu
  • *此作品的通讯作者

科研成果: 期刊稿件文章同行评审

摘要

The polarization switching behavior in poly(vinylidene fluoride- trifluoroethylene) thin films is studied by using a pulse transient current method. The dependence of the domain switching current on the coercive electric field was investigated. The charging current around the coercive field was found to be limited by domain switching instead of the series resistor in the measurement circuit because of the slow polarization switching in the films. The domain-switching process was explained by a creep model wherein the two-dimension domain walls motion in the transverse direction dominates the polarization switching process.

源语言英语
文章编号042909
期刊Applied Physics Letters
103
4
DOI
出版状态已出版 - 22 7月 2013
已对外发布

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