TY - JOUR
T1 - Temperature sensitivity of adjustable band gaps of Sb2(S, Se)3 solar cells via vapor transport deposition
AU - Qin, Deyang
AU - Pan, Xingyu
AU - Wang, Rui
AU - Pan, Yanlin
AU - Wang, Youyang
AU - Zhang, Jianing
AU - Ding, Xiaolei
AU - Chen, Yuhao
AU - Zheng, Shiqi
AU - Ye, Shoujie
AU - Pan, Yuxin
AU - Weng, Guoen
AU - Hu, Xiaobo
AU - Tao, Jiahua
AU - Zhu, Ziqiang
AU - Chu, Junhao
AU - Akiyama, Hidefumi
AU - Chen, Shaoqiang
N1 - Publisher Copyright:
© 2023
PY - 2023/12
Y1 - 2023/12
N2 - Quasi-one-dimensional antimony chalcogenide Sb2(S, Se)3 semiconductor is regarded as one of the most promising photovoltaic materials due to their high optical absorbance coefficient and tunable band gaps. However, current researchers rarely optimize experimental conditions based on characteristics of the Se/S ratio in Sb2(S, Se)3 material and ignore the experimental optimization based on material characteristics. Herein, Sb2(S, Se)3 thin films with three different Se/(Se + S) ratios (Se = 0.2, 0.5, 0.8) are prepared by vapor transport deposition (VTD) based on the temperature sensitivity of the evaporator source. The influence of VTD conditions of Sb2(S, Se)3 on optical properties, electrical properties, film quality, and defect characteristics are investigated through UV absorbance spectra, current density versus voltage (J-V) measurements, scanning electron microscopy (SEM), deep-level transient spectroscopy (DLTS), respectively. It is concluded that the deposition temperature is closely associated with the shift of the band gap. Moreover, different original Se/(Se + S) ratios yield different optimum temperatures (Se = 0.2, 480 °C; Se = 0.5, 500 °C; Se = 0.8, 520 °C), and optimum temperature increase with Se atom ratios. With optimization of the Se/(Se + S) ratio and deposition temperature, a Sb2(S, Se)3 solar cell (Se = 0.8) prepared under 520 °C has optimal light absorbance, longer carrier lifetime, and better film quality, displaying a high efficiency of 6.78%.
AB - Quasi-one-dimensional antimony chalcogenide Sb2(S, Se)3 semiconductor is regarded as one of the most promising photovoltaic materials due to their high optical absorbance coefficient and tunable band gaps. However, current researchers rarely optimize experimental conditions based on characteristics of the Se/S ratio in Sb2(S, Se)3 material and ignore the experimental optimization based on material characteristics. Herein, Sb2(S, Se)3 thin films with three different Se/(Se + S) ratios (Se = 0.2, 0.5, 0.8) are prepared by vapor transport deposition (VTD) based on the temperature sensitivity of the evaporator source. The influence of VTD conditions of Sb2(S, Se)3 on optical properties, electrical properties, film quality, and defect characteristics are investigated through UV absorbance spectra, current density versus voltage (J-V) measurements, scanning electron microscopy (SEM), deep-level transient spectroscopy (DLTS), respectively. It is concluded that the deposition temperature is closely associated with the shift of the band gap. Moreover, different original Se/(Se + S) ratios yield different optimum temperatures (Se = 0.2, 480 °C; Se = 0.5, 500 °C; Se = 0.8, 520 °C), and optimum temperature increase with Se atom ratios. With optimization of the Se/(Se + S) ratio and deposition temperature, a Sb2(S, Se)3 solar cell (Se = 0.8) prepared under 520 °C has optimal light absorbance, longer carrier lifetime, and better film quality, displaying a high efficiency of 6.78%.
KW - Deep-level transient spectroscopy (DLTS)
KW - Deposition temperature
KW - Sb(S
KW - Se) thin-film solar cell
KW - Tunable band gap
UR - https://www.scopus.com/pages/publications/85173557937
U2 - 10.1016/j.solmat.2023.112582
DO - 10.1016/j.solmat.2023.112582
M3 - 文章
AN - SCOPUS:85173557937
SN - 0927-0248
VL - 263
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
M1 - 112582
ER -
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