Temperature dependent transport properties of p Pb1-xMn x Se films

Y. H. Sun; T. Lin; K. H. Gao; Z. G. Hu; H. Z. Wu; P. X. Yang; N. Dai; J. H. Chu

doi:10.1063/1.3478708

Temperature dependent transport properties of p Pb_1-xMn _x Se films

Y. H. Sun
, T. Lin
, K. H. Gao
, Z. G. Hu
, H. Z. Wu
, P. X. Yang
, N. Dai
, J. H. Chu

物理与电子科学学院

East China Normal University
CAS - Shanghai Institute of Technical Physics
Zhejiang University

科研成果: 期刊稿件 › 文章 › 同行评审

3 引用（Scopus）

摘要

Hall measurements are performed to survey electrical properties of p Pb_1-xMn_x Se (x≈0.04) films grown by molecular beam epitaxy technique. It is indicated that these films are approaching the metal-insulator transition from the metallic side. Weak localization effect was observed up to about 50 K. The deduced phase-breaking time τ_φ on temperature is interpreted according to the concept of the electron-electron scattering in highly disordered bulk conductors.

源语言	英语
文章编号	043709
期刊	Journal of Applied Physics
卷	108
期	4
DOI	https://doi.org/10.1063/1.3478708
出版状态	已出版 - 15 8月 2010

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10.1063/1.3478708

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abstract = "Hall measurements are performed to survey electrical properties of p Pb1-xMnx Se (x≈0.04) films grown by molecular beam epitaxy technique. It is indicated that these films are approaching the metal-insulator transition from the metallic side. Weak localization effect was observed up to about 50 K. The deduced phase-breaking time τφ on temperature is interpreted according to the concept of the electron-electron scattering in highly disordered bulk conductors.",

author = "Sun, \{Y. H.\} and T. Lin and Gao, \{K. H.\} and Hu, \{Z. G.\} and Wu, \{H. Z.\} and Yang, \{P. X.\} and N. Dai and Chu, \{J. H.\}",

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doi = "10.1063/1.3478708",

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T1 - Temperature dependent transport properties of p Pb1-xMn x Se films

AU - Sun, Y. H.

AU - Lin, T.

AU - Gao, K. H.

AU - Hu, Z. G.

AU - Wu, H. Z.

AU - Yang, P. X.

AU - Dai, N.

AU - Chu, J. H.

PY - 2010/8/15

Y1 - 2010/8/15

N2 - Hall measurements are performed to survey electrical properties of p Pb1-xMnx Se (x≈0.04) films grown by molecular beam epitaxy technique. It is indicated that these films are approaching the metal-insulator transition from the metallic side. Weak localization effect was observed up to about 50 K. The deduced phase-breaking time τφ on temperature is interpreted according to the concept of the electron-electron scattering in highly disordered bulk conductors.

AB - Hall measurements are performed to survey electrical properties of p Pb1-xMnx Se (x≈0.04) films grown by molecular beam epitaxy technique. It is indicated that these films are approaching the metal-insulator transition from the metallic side. Weak localization effect was observed up to about 50 K. The deduced phase-breaking time τφ on temperature is interpreted according to the concept of the electron-electron scattering in highly disordered bulk conductors.

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U2 - 10.1063/1.3478708

DO - 10.1063/1.3478708

M3 - 文章

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SN - 0021-8979

VL - 108

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

M1 - 043709

ER -

Temperature dependent transport properties of p Pb1-xMn x Se films

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Temperature dependent transport properties of p Pb_1-xMn _x Se films