Temperature dependence of ferroelectric and dielectric properties of PbZr0.5Ti0.5O3 thin film based capacitors

X. J. Meng; J. L. Sun; X. G. Wang; T. Lin; J. H. Ma; S. L. Guo; J. H. Chu

doi:10.1063/1.1522833

Temperature dependence of ferroelectric and dielectric properties of PbZr_0.5Ti_0.5O₃ thin film based capacitors

X. J. Meng^*
, J. L. Sun
, X. G. Wang
, T. Lin
, J. H. Ma
, S. L. Guo
, J. H. Chu

^*此作品的通讯作者

CAS - Shanghai Institute of Technical Physics

科研成果: 期刊稿件 › 文章 › 同行评审

34 引用（Scopus）

摘要

The temperature dependence of ferroelectric and dielectric properties of PbZr_0.5Ti_0.5O₃ thin film based capacitors was discussed. It was found that both the saturation polarization and remanent polarization increase with decreasing temperature from 300 to ∼ 50 K and decreased as the temperature continued to decrease below 40 K. The analysis showed that the anomalous behavior of the temperature was due to a phase transition in the PbZr_0.5Ti_0.5O₃.

源语言	英语
页（从-至）	4035-4037
页数	3
期刊	Applied Physics Letters
卷	81
期	21
DOI	https://doi.org/10.1063/1.1522833
出版状态	已出版 - 18 11月 2002
已对外发布	是

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title = "Temperature dependence of ferroelectric and dielectric properties of PbZr0.5Ti0.5O3 thin film based capacitors",

abstract = "The temperature dependence of ferroelectric and dielectric properties of PbZr0.5Ti0.5O3 thin film based capacitors was discussed. It was found that both the saturation polarization and remanent polarization increase with decreasing temperature from 300 to ∼ 50 K and decreased as the temperature continued to decrease below 40 K. The analysis showed that the anomalous behavior of the temperature was due to a phase transition in the PbZr0.5Ti0.5O3.",

author = "Meng, \{X. J.\} and Sun, \{J. L.\} and Wang, \{X. G.\} and T. Lin and Ma, \{J. H.\} and Guo, \{S. L.\} and Chu, \{J. H.\}",

year = "2002",

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T1 - Temperature dependence of ferroelectric and dielectric properties of PbZr0.5Ti0.5O3 thin film based capacitors

AU - Meng, X. J.

AU - Sun, J. L.

AU - Wang, X. G.

AU - Lin, T.

AU - Ma, J. H.

AU - Guo, S. L.

AU - Chu, J. H.

PY - 2002/11/18

Y1 - 2002/11/18

N2 - The temperature dependence of ferroelectric and dielectric properties of PbZr0.5Ti0.5O3 thin film based capacitors was discussed. It was found that both the saturation polarization and remanent polarization increase with decreasing temperature from 300 to ∼ 50 K and decreased as the temperature continued to decrease below 40 K. The analysis showed that the anomalous behavior of the temperature was due to a phase transition in the PbZr0.5Ti0.5O3.

AB - The temperature dependence of ferroelectric and dielectric properties of PbZr0.5Ti0.5O3 thin film based capacitors was discussed. It was found that both the saturation polarization and remanent polarization increase with decreasing temperature from 300 to ∼ 50 K and decreased as the temperature continued to decrease below 40 K. The analysis showed that the anomalous behavior of the temperature was due to a phase transition in the PbZr0.5Ti0.5O3.

UR - https://www.scopus.com/pages/publications/0037132305

U2 - 10.1063/1.1522833

DO - 10.1063/1.1522833

M3 - 文章

AN - SCOPUS:0037132305

SN - 0003-6951

VL - 81

SP - 4035

EP - 4037

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Temperature dependence of ferroelectric and dielectric properties of PbZr0.5Ti0.5O3 thin film based capacitors

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Temperature dependence of ferroelectric and dielectric properties of PbZr_0.5Ti_0.5O₃ thin film based capacitors