Synthesis of Cu2FeSnSe4 thin film by selenization of RF magnetron sputtered precursor

Xiankuan Meng; Hongmei Deng; Jun He; Liping Zhu; Lin Sun; Pingxiong Yang; Junhao Chu

doi:10.1016/j.matlet.2013.11.107

Synthesis of Cu₂FeSnSe₄ thin film by selenization of RF magnetron sputtered precursor

Xiankuan Meng
, Hongmei Deng
, Jun He
, Liping Zhu
, Lin Sun
, Pingxiong Yang^*
, Junhao Chu

^*此作品的通讯作者

物理与电子科学学院

East China Normal University
Shanghai University

科研成果: 期刊稿件 › 文章 › 同行评审

30 引用（Scopus）

摘要

Cu₂FeSnSe₄ (CFTSe) thin film was synthesized on glass substrate by two-stage process, which is RF magnetron sputtering and following post-annealing process. The chemical composition is close to the stoichiometry of 2:1:1:4 measured by energy dispersive X-ray spectroscopy. X-ray diffraction pattern indicates that all phases belong to CFTSe. It indicates that there are no additional or intermediate phases. A₁ mode of the film is observed in Raman scattering spectra. From the results of XRD and Raman spectrum analysis, the structure of CFTSe can be determined. The film exhibits stannite structure (space group 14̄2m) with lattice parameters a=5.6889 Å and c=11.284 Å. Further transmission spectra demonstrates that the band gap of thin film is 1.10 eV.

源语言	英语
页（从-至）	1-3
页数	3
期刊	Materials Letters
卷	117
DOI	https://doi.org/10.1016/j.matlet.2013.11.107
出版状态	已出版 - 15 2月 2014

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10.1016/j.matlet.2013.11.107

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@article{d37080951a5046deb5a715148cf8fc55,

title = "Synthesis of Cu2FeSnSe4 thin film by selenization of RF magnetron sputtered precursor",

abstract = "Cu2FeSnSe4 (CFTSe) thin film was synthesized on glass substrate by two-stage process, which is RF magnetron sputtering and following post-annealing process. The chemical composition is close to the stoichiometry of 2:1:1:4 measured by energy dispersive X-ray spectroscopy. X-ray diffraction pattern indicates that all phases belong to CFTSe. It indicates that there are no additional or intermediate phases. A1 mode of the film is observed in Raman scattering spectra. From the results of XRD and Raman spectrum analysis, the structure of CFTSe can be determined. The film exhibits stannite structure (space group 1{\=4}2m) with lattice parameters a=5.6889 {\AA} and c=11.284 {\AA}. Further transmission spectra demonstrates that the band gap of thin film is 1.10 eV.",

keywords = "CuFeSnSe, Optical properties, Solar energy materials, Sputtering, Thin film",

author = "Xiankuan Meng and Hongmei Deng and Jun He and Liping Zhu and Lin Sun and Pingxiong Yang and Junhao Chu",

year = "2014",

month = feb,

day = "15",

doi = "10.1016/j.matlet.2013.11.107",

language = "英语",

volume = "117",

pages = "1--3",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Synthesis of Cu2FeSnSe4 thin film by selenization of RF magnetron sputtered precursor

AU - Meng, Xiankuan

AU - Deng, Hongmei

AU - He, Jun

AU - Zhu, Liping

AU - Sun, Lin

AU - Yang, Pingxiong

AU - Chu, Junhao

PY - 2014/2/15

Y1 - 2014/2/15

N2 - Cu2FeSnSe4 (CFTSe) thin film was synthesized on glass substrate by two-stage process, which is RF magnetron sputtering and following post-annealing process. The chemical composition is close to the stoichiometry of 2:1:1:4 measured by energy dispersive X-ray spectroscopy. X-ray diffraction pattern indicates that all phases belong to CFTSe. It indicates that there are no additional or intermediate phases. A1 mode of the film is observed in Raman scattering spectra. From the results of XRD and Raman spectrum analysis, the structure of CFTSe can be determined. The film exhibits stannite structure (space group 14̄2m) with lattice parameters a=5.6889 Å and c=11.284 Å. Further transmission spectra demonstrates that the band gap of thin film is 1.10 eV.

AB - Cu2FeSnSe4 (CFTSe) thin film was synthesized on glass substrate by two-stage process, which is RF magnetron sputtering and following post-annealing process. The chemical composition is close to the stoichiometry of 2:1:1:4 measured by energy dispersive X-ray spectroscopy. X-ray diffraction pattern indicates that all phases belong to CFTSe. It indicates that there are no additional or intermediate phases. A1 mode of the film is observed in Raman scattering spectra. From the results of XRD and Raman spectrum analysis, the structure of CFTSe can be determined. The film exhibits stannite structure (space group 14̄2m) with lattice parameters a=5.6889 Å and c=11.284 Å. Further transmission spectra demonstrates that the band gap of thin film is 1.10 eV.

KW - CuFeSnSe

KW - Optical properties

KW - Solar energy materials

KW - Sputtering

KW - Thin film

UR - https://www.scopus.com/pages/publications/84890354911

U2 - 10.1016/j.matlet.2013.11.107

DO - 10.1016/j.matlet.2013.11.107

M3 - 文章

AN - SCOPUS:84890354911

SN - 0167-577X

VL - 117

SP - 1

EP - 3

JO - Materials Letters

JF - Materials Letters

ER -

Synthesis of Cu2FeSnSe4 thin film by selenization of RF magnetron sputtered precursor

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Synthesis of Cu₂FeSnSe₄ thin film by selenization of RF magnetron sputtered precursor