TY - JOUR
T1 - Superconductor-semiconductor-superconductor lateral heterojunction diodes based on MSi2 N4 (M = Ta, Mo, W) monolayers
AU - Fan, Xiaozheng
AU - Wu, Ruqian
AU - Ma, Chunlan
AU - Gong, Shijing
AU - Zhao, Chuanxi
AU - Wang, Tianxing
AU - Dong, Xiao
AU - Yin, Shaoqian
AU - An, Yipeng
N1 - Publisher Copyright:
© 2025 American Physical Society.
PY - 2025/3
Y1 - 2025/3
N2 - Heterojunctions of two-dimensional (2D) materials have generated substantial research interest due to their diverse and novel properties. In this study, we propose a class of superconductor-semiconductor-superconductor (SSS) lateral heterojunction diodes based on MSi2N4 (M = Ta,Mo, W) monolayers. Using the ab initio method, we simulate the time- and angle-resolved photoelectron spectroscopy (Tr-ARPES) for all MSi2N4 monolayers and, importantly, reveal the one-band and two-gap s-wave superconductivities in TaSi2N4. Furthermore, these SSS diodes exhibit a significant and tunable negative differential resistance (NDR) effect. Our findings suggest that MSi2N4 monolayers are promising platforms for studying superconducting materials and NDR-based nanodevices, further broadening the potential applications of the MA2Z4 family of materials in nanoelectronics.
AB - Heterojunctions of two-dimensional (2D) materials have generated substantial research interest due to their diverse and novel properties. In this study, we propose a class of superconductor-semiconductor-superconductor (SSS) lateral heterojunction diodes based on MSi2N4 (M = Ta,Mo, W) monolayers. Using the ab initio method, we simulate the time- and angle-resolved photoelectron spectroscopy (Tr-ARPES) for all MSi2N4 monolayers and, importantly, reveal the one-band and two-gap s-wave superconductivities in TaSi2N4. Furthermore, these SSS diodes exhibit a significant and tunable negative differential resistance (NDR) effect. Our findings suggest that MSi2N4 monolayers are promising platforms for studying superconducting materials and NDR-based nanodevices, further broadening the potential applications of the MA2Z4 family of materials in nanoelectronics.
UR - https://www.scopus.com/pages/publications/105001596353
U2 - 10.1103/PhysRevApplied.23.034082
DO - 10.1103/PhysRevApplied.23.034082
M3 - 文章
AN - SCOPUS:105001596353
SN - 2331-7019
VL - 23
JO - Physical Review Applied
JF - Physical Review Applied
IS - 3
M1 - 034082
ER -