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Substrates and interlayer coupling effects on Mo1-xWxSe2alloys

  • Fang Liang
  • , Hejun Xu
  • , Zuoyuan Dong
  • , Yafeng Xie
  • , Chen Luo
  • , Yin Xia
  • , Jian Zhang
  • , Jun Wang
  • , Xing Wu*
  • *此作品的通讯作者
  • East China Normal University
  • CAS - Shanghai Institute of Optics and Fine Mechanics

科研成果: 期刊稿件文章同行评审

摘要

Two-dimensional (2D) transition metal dichalcogenides alloys are potential materials in the application of photodetectors over a wide spectral range due to their composition-dependent bandgaps. The study of bandgap engineering is important for the application of 2D materials in devices. Here, we grow the Mo1-xW x Se2 alloys on mica, sapphire and SiO2/Si substrates by chemical vapor deposition (CVD) method. Mo1-xW x Se2 alloys are grown on the mica substrates by CVD method for the first time. Photoluminescence (PL) spectroscopy is used to investigate the effects of substrates and interlayer coupling force on the optical bandgaps of as-grown Mo1-xW x Se2 alloys. We find that the substrates used in this work have an ignorable effect on the optical bandgaps of as-grown Mo1-xW x Se2. The interlayer coupling effect on the optical bandgaps of as-grown Mo1-xW x Se2 is larger than the substrates effect. These findings provide a new way for the future study of the growth and physical properties of 2D alloy materials.

源语言英语
文章编号062005
期刊Journal of Semiconductors
40
6
DOI
出版状态已出版 - 2019

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