Subnanometre ferroelectricity in strain-engineered gallium oxide

Zhao Guan; Ni Zhong

doi:10.1038/s41928-026-01702-4

Subnanometre ferroelectricity in strain-engineered gallium oxide

Zhao Guan
, Ni Zhong^*

^*此作品的通讯作者

物理与电子科学学院

Key Laboratory of Polar Materials and Devices (Ministry of Education)
East China Normal University
Shanxi University

科研成果: 期刊稿件 › 评论/辩论

摘要

A layer of gallium oxide that is only a half-unit-cell thick can be converted via strain engineering into a zincblende phase with switchable ferroelectricity and a coercive voltage below 1 V.

源语言	英语
页（从-至）	982-983
页数	2
期刊	Nature Electronics
卷	9
期	9
DOI	https://doi.org/10.1038/s41928-026-01702-4
出版状态	已出版 - 9月 2026

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title = "Subnanometre ferroelectricity in strain-engineered gallium oxide",

abstract = "A layer of gallium oxide that is only a half-unit-cell thick can be converted via strain engineering into a zincblende phase with switchable ferroelectricity and a coercive voltage below 1 V.",

author = "Zhao Guan and Ni Zhong",

note = "Publisher Copyright: {\textcopyright} Springer Nature Limited 2026.",

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M3 - 评论/辩论

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Subnanometre ferroelectricity in strain-engineered gallium oxide

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