摘要
Micro-Raman analysis was used to identify the oxidation of a silicon microchannel plate (SiMCP) and it indicated that the bend phenomenon of the SiMCP was related to the release of stress and the volume expending of the silicon wall during the oxidation process.
| 源语言 | 英语 |
|---|---|
| 文章编号 | 055010 |
| 期刊 | Semiconductor Science and Technology |
| 卷 | 31 |
| 期 | 5 |
| DOI | |
| 出版状态 | 已出版 - 29 3月 2016 |
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