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Study on the strain in a silicon microchannel plate by micro-Raman analysis

  • East China Normal University
  • City University of Hong Kong

科研成果: 期刊稿件文章同行评审

摘要

Micro-Raman analysis was used to identify the oxidation of a silicon microchannel plate (SiMCP) and it indicated that the bend phenomenon of the SiMCP was related to the release of stress and the volume expending of the silicon wall during the oxidation process.

源语言英语
文章编号055010
期刊Semiconductor Science and Technology
31
5
DOI
出版状态已出版 - 29 3月 2016

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