摘要
By measuring the magneto-capacitance spectroscopy of an n-type InSb metal-insulator-semiconductor (MIS) structure, the 2-D hole subband in the p-type channel of the InSb MIS device was investigated under different magnetic fields at 1.2K. The results show that the on set energy of the p-type channel depends strongly on the magnetic field, which is mainly attributed to the dependence of the InSb band gap energy on the magnetic field.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 7-10 |
| 页数 | 4 |
| 期刊 | Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves |
| 卷 | 16 |
| 期 | 1 |
| 出版状态 | 已出版 - 2月 1997 |
| 已对外发布 | 是 |
指纹
探究 'Study on the magneto-capacitance spectroscopy of InSb MIS structure' 的科研主题。它们共同构成独一无二的指纹。引用此
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