Study on the crystallization behaviors of Si2Sb 2Tex materials

Kun Ren; Feng Rao; Zhitang Song; Yan Cheng; Liangcai Wu; Xilin Zhou; Yuefeng Gong; Mengjiao Xia; Bo Liu; Songlin Feng

doi:10.1016/j.scriptamat.2010.12.029

Study on the crystallization behaviors of Si₂Sb ₂Te_x materials

Kun Ren^*
, Feng Rao
, Zhitang Song
, Yan Cheng
, Liangcai Wu
, Xilin Zhou
, Yuefeng Gong
, Mengjiao Xia
, Bo Liu
, Songlin Feng

^*此作品的通讯作者

CAS - Shanghai Institute of Microsystem and Information Technology
University of Chinese Academy of Sciences

科研成果: 期刊稿件 › 文章 › 同行评审

10 引用（Scopus）

摘要

The crystallization behaviors and mechanisms of Si₂Sb ₂Te_x (x = 1, 3 and 6) were investigated. The crystallization process in Si₂Sb₂Te_x films were proved to be layer by layer, which is the same as that of GeSbTe material. Among the three compositions, Si₂Sb₂Te₃ has the best phase stability, the best data retention and a high crystallization speed. These results indicate that choosing Sb₂Te₃ as the basis for Si doping is the best way to optimize the properties of Si-Sb-Te materials.

源语言	英语
页（从-至）	685-688
页数	4
期刊	Scripta Materialia
卷	64
期	7
DOI	https://doi.org/10.1016/j.scriptamat.2010.12.029
出版状态	已出版 - 4月 2011
已对外发布	是

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10.1016/j.scriptamat.2010.12.029

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@article{1bc34bff619f48d88dd1a7a8c5a2c55b,

title = "Study on the crystallization behaviors of Si2Sb 2Tex materials",

abstract = "The crystallization behaviors and mechanisms of Si2Sb 2Tex (x = 1, 3 and 6) were investigated. The crystallization process in Si2Sb2Tex films were proved to be layer by layer, which is the same as that of GeSbTe material. Among the three compositions, Si2Sb2Te3 has the best phase stability, the best data retention and a high crystallization speed. These results indicate that choosing Sb2Te3 as the basis for Si doping is the best way to optimize the properties of Si-Sb-Te materials.",

keywords = "Annealing, Chalcogenide, Electrical resistivity, SiSb Te",

author = "Kun Ren and Feng Rao and Zhitang Song and Yan Cheng and Liangcai Wu and Xilin Zhou and Yuefeng Gong and Mengjiao Xia and Bo Liu and Songlin Feng",

year = "2011",

month = apr,

doi = "10.1016/j.scriptamat.2010.12.029",

language = "英语",

volume = "64",

pages = "685--688",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Acta Materialia Inc",

number = "7",

}

TY - JOUR

T1 - Study on the crystallization behaviors of Si2Sb 2Tex materials

AU - Ren, Kun

AU - Rao, Feng

AU - Song, Zhitang

AU - Cheng, Yan

AU - Wu, Liangcai

AU - Zhou, Xilin

AU - Gong, Yuefeng

AU - Xia, Mengjiao

AU - Liu, Bo

AU - Feng, Songlin

PY - 2011/4

Y1 - 2011/4

N2 - The crystallization behaviors and mechanisms of Si2Sb 2Tex (x = 1, 3 and 6) were investigated. The crystallization process in Si2Sb2Tex films were proved to be layer by layer, which is the same as that of GeSbTe material. Among the three compositions, Si2Sb2Te3 has the best phase stability, the best data retention and a high crystallization speed. These results indicate that choosing Sb2Te3 as the basis for Si doping is the best way to optimize the properties of Si-Sb-Te materials.

AB - The crystallization behaviors and mechanisms of Si2Sb 2Tex (x = 1, 3 and 6) were investigated. The crystallization process in Si2Sb2Tex films were proved to be layer by layer, which is the same as that of GeSbTe material. Among the three compositions, Si2Sb2Te3 has the best phase stability, the best data retention and a high crystallization speed. These results indicate that choosing Sb2Te3 as the basis for Si doping is the best way to optimize the properties of Si-Sb-Te materials.

KW - Annealing

KW - Chalcogenide

KW - Electrical resistivity

KW - SiSb Te

UR - https://www.scopus.com/pages/publications/79251598812

U2 - 10.1016/j.scriptamat.2010.12.029

DO - 10.1016/j.scriptamat.2010.12.029

M3 - 文章

AN - SCOPUS:79251598812

SN - 1359-6462

VL - 64

SP - 685

EP - 688

JO - Scripta Materialia

JF - Scripta Materialia

IS - 7

ER -

Study on the crystallization behaviors of Si2Sb 2Tex materials

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Study on the crystallization behaviors of Si₂Sb ₂Te_x materials