摘要
Based on our empirical rules for the intrinsic absorption coefficient and refractive index of Hg1-xCdxTe in Hougen's model, a useful method for determining the composition profile of an epitaxy layer from room-temperature infrared transmittance spectroscopy is presented. The compositional depth non-uniformity of Hg1-xCdxTe film samples grown by liquid-phase epitaxy, metal-organic chemical vapour deposition and molecular beam epitaxy techniques is determined using this method and compared with that from secondary ion mass spectroscopy and X-ray microprobic measurements.
| 源语言 | 英语 |
|---|---|
| 文章编号 | 004 |
| 页(从-至) | 29-35 |
| 页数 | 7 |
| 期刊 | Journal of Physics Condensed Matter |
| 卷 | 7 |
| 期 | 1 |
| DOI | |
| 出版状态 | 已出版 - 1995 |
| 已对外发布 | 是 |
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