Study on the As redistribution in β-FeSi2 film prepared by reactive deposition epitaxy

Lianwei Wang; Chenglu Lin; Xiangdong Chen; Shichang Zou; Zuyao Zhou; Xianghuai Liu

Study on the As redistribution in β-FeSi₂ film prepared by reactive deposition epitaxy

Lianwei Wang^*
, Chenglu Lin
, Xiangdong Chen
, Shichang Zou
, Zuyao Zhou
, Xianghuai Liu

^*此作品的通讯作者

Chinese Academy of Sciences

科研成果: 会议稿件 › 论文 › 同行评审

摘要

In this paper, we report on the As redistribution properties in β-FeSi₂ prepared by reactive deposition epitaxy. Unlike the case of solid phase epitaxy, no snow plough effect has been found. Arsenic atoms become resident in the surface silicide layer, indicating that the diffusion process during the reactive deposition is different from the case of solid phase epitaxy. Further annealing drive the arsenic atoms out of the film.

源语言	英语
页	721-724
页数	4
出版状态	已出版 - 1996
已对外发布	是
活动	Proceedings of the 1996 11th International Conference on Ion Implantation Technology - Austin, TX, USA 期限: 16 6月 1996 → 21 6月 1996

会议

会议	Proceedings of the 1996 11th International Conference on Ion Implantation Technology
市	Austin, TX, USA
时期	16/06/96 → 21/06/96

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引用此

@conference{9b3cadfa27574f9f996a003ecee34787,

title = "Study on the As redistribution in β-FeSi2 film prepared by reactive deposition epitaxy",

abstract = "In this paper, we report on the As redistribution properties in β-FeSi2 prepared by reactive deposition epitaxy. Unlike the case of solid phase epitaxy, no snow plough effect has been found. Arsenic atoms become resident in the surface silicide layer, indicating that the diffusion process during the reactive deposition is different from the case of solid phase epitaxy. Further annealing drive the arsenic atoms out of the film.",

author = "Lianwei Wang and Chenglu Lin and Xiangdong Chen and Shichang Zou and Zuyao Zhou and Xianghuai Liu",

year = "1996",

language = "英语",

pages = "721--724",

note = "Proceedings of the 1996 11th International Conference on Ion Implantation Technology ; Conference date: 16-06-1996 Through 21-06-1996",

}

TY - CONF

T1 - Study on the As redistribution in β-FeSi2 film prepared by reactive deposition epitaxy

AU - Wang, Lianwei

AU - Lin, Chenglu

AU - Chen, Xiangdong

AU - Zou, Shichang

AU - Zhou, Zuyao

AU - Liu, Xianghuai

PY - 1996

Y1 - 1996

N2 - In this paper, we report on the As redistribution properties in β-FeSi2 prepared by reactive deposition epitaxy. Unlike the case of solid phase epitaxy, no snow plough effect has been found. Arsenic atoms become resident in the surface silicide layer, indicating that the diffusion process during the reactive deposition is different from the case of solid phase epitaxy. Further annealing drive the arsenic atoms out of the film.

AB - In this paper, we report on the As redistribution properties in β-FeSi2 prepared by reactive deposition epitaxy. Unlike the case of solid phase epitaxy, no snow plough effect has been found. Arsenic atoms become resident in the surface silicide layer, indicating that the diffusion process during the reactive deposition is different from the case of solid phase epitaxy. Further annealing drive the arsenic atoms out of the film.

UR - https://www.scopus.com/pages/publications/0030372412

M3 - 论文

AN - SCOPUS:0030372412

SP - 721

EP - 724

T2 - Proceedings of the 1996 11th International Conference on Ion Implantation Technology

Y2 - 16 June 1996 through 21 June 1996

ER -

Study on the As redistribution in β-FeSi2 film prepared by reactive deposition epitaxy

摘要

会议

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引用此

Study on the As redistribution in β-FeSi₂ film prepared by reactive deposition epitaxy