Study of Te precipitated phase in CdZnTe crystals

Jiqian Zhu; Junhao Chu; Xiaoping Zhang; Biao Li; Jijian Cheng

Study of Te precipitated phase in CdZnTe crystals

Jiqian Zhu^*
, Junhao Chu
, Xiaoping Zhang
, Biao Li
, Jijian Cheng

^*此作品的通讯作者

CAS - Shanghai Institute of Technical Physics

科研成果: 期刊稿件 › 文章 › 同行评审

4 引用（Scopus）

摘要

The precipitated phase in Bridgman-grown CdZnTe crystals has been investigated by transmission electron microscopy (TEM), transmission infrared microscopy, infrared transmission spectroscopy and differential scanning calorimetry (DSC). Origination and distinction between Te precipitate and Te inclusion in CdZnTe crystals are discussed. The experimental results of infrared spectra and DSC technique show that when the concentration of Te precipitates/inclusions (wT_e) is higher than 0.6 wt%, the IR transmittance is lower than 55% and then quickly decreases as wT_e increases. This can be explained by using the optical transition within the valance band of II-VI semiconductor.

源语言	英语
页（从-至）	275-279
页数	5
期刊	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
卷	19
期	4
出版状态	已出版 - 1998
已对外发布	是

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{6b6b536393bc45dfb74bf35cfca3000f,

title = "Study of Te precipitated phase in CdZnTe crystals",

abstract = "The precipitated phase in Bridgman-grown CdZnTe crystals has been investigated by transmission electron microscopy (TEM), transmission infrared microscopy, infrared transmission spectroscopy and differential scanning calorimetry (DSC). Origination and distinction between Te precipitate and Te inclusion in CdZnTe crystals are discussed. The experimental results of infrared spectra and DSC technique show that when the concentration of Te precipitates/inclusions (wTe) is higher than 0.6 wt\%, the IR transmittance is lower than 55\% and then quickly decreases as wTe increases. This can be explained by using the optical transition within the valance band of II-VI semiconductor.",

author = "Jiqian Zhu and Junhao Chu and Xiaoping Zhang and Biao Li and Jijian Cheng",

year = "1998",

language = "英语",

volume = "19",

pages = "275--279",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

issn = "0253-4177",

publisher = "Kexue Chubaneshe/Science Press",

number = "4",

}

TY - JOUR

T1 - Study of Te precipitated phase in CdZnTe crystals

AU - Zhu, Jiqian

AU - Chu, Junhao

AU - Zhang, Xiaoping

AU - Li, Biao

AU - Cheng, Jijian

PY - 1998

Y1 - 1998

N2 - The precipitated phase in Bridgman-grown CdZnTe crystals has been investigated by transmission electron microscopy (TEM), transmission infrared microscopy, infrared transmission spectroscopy and differential scanning calorimetry (DSC). Origination and distinction between Te precipitate and Te inclusion in CdZnTe crystals are discussed. The experimental results of infrared spectra and DSC technique show that when the concentration of Te precipitates/inclusions (wTe) is higher than 0.6 wt%, the IR transmittance is lower than 55% and then quickly decreases as wTe increases. This can be explained by using the optical transition within the valance band of II-VI semiconductor.

AB - The precipitated phase in Bridgman-grown CdZnTe crystals has been investigated by transmission electron microscopy (TEM), transmission infrared microscopy, infrared transmission spectroscopy and differential scanning calorimetry (DSC). Origination and distinction between Te precipitate and Te inclusion in CdZnTe crystals are discussed. The experimental results of infrared spectra and DSC technique show that when the concentration of Te precipitates/inclusions (wTe) is higher than 0.6 wt%, the IR transmittance is lower than 55% and then quickly decreases as wTe increases. This can be explained by using the optical transition within the valance band of II-VI semiconductor.

UR - https://www.scopus.com/pages/publications/0032257978

M3 - 文章

AN - SCOPUS:0032257978

SN - 0253-4177

VL - 19

SP - 275

EP - 279

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 4

ER -

Study of Te precipitated phase in CdZnTe crystals

摘要

其它文件与链接

指纹

引用此