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Study of optical characteristics of damage in oxygen-implanted 6H-SiC

  • Lianwei Wang
  • , Jipo Huang
  • , Chenglu Lin
  • , Shichang Zou
  • , Yuxiang Zheng
  • , Xinjun Wang
  • , Daming Huang
  • , C. M. Zetterling
  • , M. Östling
  • CAS - Shanghai Institute of Microsystem and Information Technology
  • Fudan University
  • KTH Royal Institute of Technology

科研成果: 期刊稿件文章同行评审

摘要

Oxygen ions, with an energy of 70 keV, and doses ranging from 5×1013 to 5×1015 cm-2, were implanted into 6H SiC. The damage energies were calculated as 0.93-93 eV/atom with the doses respectively. The dielectric function obtained from spectroscopic ellipsometry were quite sensitive to ion irradiation of the surface, while the first order Raman spectroscopy decreased in intensity with increasing O+ ion dose. The damage behavior characterized by optical measurements was in good agreement with characterization by Rutherford backscattering spectrometry and channeling and atomic force microscopy.

源语言英语
页(从-至)979-982
页数4
期刊Journal of Materials Science Letters
18
12
DOI
出版状态已出版 - 1999
已对外发布

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