Structural characterization of codeposition growth β-FeSi₂ film

Epitaxial β-FeSi₂ film on Si(111) was prepared by codeposition of iron and silicon onto a β-FeSi₂ template at 400°C and subsequent annealing at 700°C for 2h. The template was prepared by reactive deposition epitaxy on Si(111). X-ray diffraction (XRD) pattern shows only β-FeSi₂(202) or (220) peak which is in correspondence with the epitaxial β-FeSi₂(101) or (110) on Si(111). Cross-sectional transmission electron microscopy (XTEM) and high resolution TEM (HRTEM) observation show that the β-FeSi₂/Si interface was quite flat near atomic level. Conversion electron Msbauer spectrum proves that the film grows in one or more epitaxial equivalent orientations rather than in a polycrystalline manner.