Structural characterization of β-FeSi2 films on Si(100) prepared by reactive deposition solid phase epitaxy

Rushan Ni; Lianwei Wang; Qinwo Shen; Chenglu Lin

Structural characterization of β-FeSi₂ films on Si(100) prepared by reactive deposition solid phase epitaxy

Rushan Ni^*
, Lianwei Wang
, Qinwo Shen
, Chenglu Lin

^*此作品的通讯作者

CAS - Shanghai Institute of Microsystem and Information Technology

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

Semiconducting β-FeSi₂ films have been synthesized by reactive deposition solid phase epitaxy. X-ray diffraction, Rutherford backscattering spectroscopy and channeling, and transmission electron microscopy have been used to determine the microstructure. Different growth conditions have been compared.

源语言	英语
页（从-至）	541-545
页数	5
期刊	Journal of Trace and Microprobe Techniques
卷	15
期	4
出版状态	已出版 - 1997
已对外发布	是

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引用此

@article{3e3a6fc33a0b4cea8ac4fd395116057f,

title = "Structural characterization of β-FeSi2 films on Si(100) prepared by reactive deposition solid phase epitaxy",

abstract = "Semiconducting β-FeSi2 films have been synthesized by reactive deposition solid phase epitaxy. X-ray diffraction, Rutherford backscattering spectroscopy and channeling, and transmission electron microscopy have been used to determine the microstructure. Different growth conditions have been compared.",

keywords = "Growth, Structure, XRD, XTEM, β-FeSi film",

author = "Rushan Ni and Lianwei Wang and Qinwo Shen and Chenglu Lin",

year = "1997",

language = "英语",

volume = "15",

pages = "541--545",

journal = "Journal of Trace and Microprobe Techniques",

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number = "4",

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TY - JOUR

T1 - Structural characterization of β-FeSi2 films on Si(100) prepared by reactive deposition solid phase epitaxy

AU - Ni, Rushan

AU - Wang, Lianwei

AU - Shen, Qinwo

AU - Lin, Chenglu

PY - 1997

Y1 - 1997

N2 - Semiconducting β-FeSi2 films have been synthesized by reactive deposition solid phase epitaxy. X-ray diffraction, Rutherford backscattering spectroscopy and channeling, and transmission electron microscopy have been used to determine the microstructure. Different growth conditions have been compared.

AB - Semiconducting β-FeSi2 films have been synthesized by reactive deposition solid phase epitaxy. X-ray diffraction, Rutherford backscattering spectroscopy and channeling, and transmission electron microscopy have been used to determine the microstructure. Different growth conditions have been compared.

KW - Growth

KW - Structure

KW - XRD

KW - XTEM

KW - β-FeSi film

UR - https://www.scopus.com/pages/publications/26444573279

M3 - 文章

AN - SCOPUS:26444573279

SN - 0733-4680

VL - 15

SP - 541

EP - 545

JO - Journal of Trace and Microprobe Techniques

JF - Journal of Trace and Microprobe Techniques

IS - 4

ER -

Structural characterization of β-FeSi2 films on Si(100) prepared by reactive deposition solid phase epitaxy

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引用此

Structural characterization of β-FeSi₂ films on Si(100) prepared by reactive deposition solid phase epitaxy