Structural and electrical characteristics of oriented Pb(Zr0.52Ti0.48)O3 ferroelectric thin films deposited on diamond substrates by a simple sol-gel process

Jianming Zeng; Lianwei Wang; Jianxia Gao; Zhitang Song; Xiangrong Zhu; Chenglu Lin; Li Hou; Erkai Liu

doi:10.1016/S0022-0248(98)01024-0

Structural and electrical characteristics of oriented Pb(Zr_0.52Ti_0.48)O₃ ferroelectric thin films deposited on diamond substrates by a simple sol-gel process

Jianming Zeng^*
, Lianwei Wang
, Jianxia Gao
, Zhitang Song
, Xiangrong Zhu
, Chenglu Lin
, Li Hou
, Erkai Liu

^*此作品的通讯作者

CAS - Shanghai Institute of Microsystem and Information Technology
Beijing Sinoma Synthetic Crystals Co., Ltd.

科研成果: 期刊稿件 › 文章 › 同行评审

14 引用（Scopus）

摘要

We firstly report the successful deposition of highly oriented Pb(Zr_0.52Ti_0.48)O₃ (PZT) ferroelectric thin films on diamond substrates by a simple sol-gel process. The PZT thin films exhibited good surface morphological, structural and electrical characteristics. The electrical measurements were conducted on PZT films in metal-ferroelectric-metal (MFM) capacitor configuration. The typical remanent polarization and coercive electric field values were 5.1 μC/cm² and 70.0 kV/cm, respectively, at an applied electric field of 300 kV/cm. The low leakage current of 10^-8 A/cm₂ was found at an applied electric field of 120 kV/cm.

源语言	英语
页（从-至）	874-878
页数	5
期刊	Journal of Crystal Growth
卷	197
期	4
DOI	https://doi.org/10.1016/S0022-0248(98)01024-0
出版状态	已出版 - 1 3月 1999
已对外发布	是

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@article{6f280484c6eb45c0b2ca7c8411b7efab,

title = "Structural and electrical characteristics of oriented Pb(Zr0.52Ti0.48)O3 ferroelectric thin films deposited on diamond substrates by a simple sol-gel process",

abstract = "We firstly report the successful deposition of highly oriented Pb(Zr0.52Ti0.48)O3 (PZT) ferroelectric thin films on diamond substrates by a simple sol-gel process. The PZT thin films exhibited good surface morphological, structural and electrical characteristics. The electrical measurements were conducted on PZT films in metal-ferroelectric-metal (MFM) capacitor configuration. The typical remanent polarization and coercive electric field values were 5.1 μC/cm2 and 70.0 kV/cm, respectively, at an applied electric field of 300 kV/cm. The low leakage current of 10-8 A/cm2 was found at an applied electric field of 120 kV/cm.",

keywords = "Diamond, Ferroelectric thin films, Pb(ZrTi)O, Sol-gel, Surface acoustic wave",

author = "Jianming Zeng and Lianwei Wang and Jianxia Gao and Zhitang Song and Xiangrong Zhu and Chenglu Lin and Li Hou and Erkai Liu",

year = "1999",

month = mar,

day = "1",

doi = "10.1016/S0022-0248(98)01024-0",

language = "英语",

volume = "197",

pages = "874--878",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "4",

}

TY - JOUR

T1 - Structural and electrical characteristics of oriented Pb(Zr0.52Ti0.48)O3 ferroelectric thin films deposited on diamond substrates by a simple sol-gel process

AU - Zeng, Jianming

AU - Wang, Lianwei

AU - Gao, Jianxia

AU - Song, Zhitang

AU - Zhu, Xiangrong

AU - Lin, Chenglu

AU - Hou, Li

AU - Liu, Erkai

PY - 1999/3/1

Y1 - 1999/3/1

N2 - We firstly report the successful deposition of highly oriented Pb(Zr0.52Ti0.48)O3 (PZT) ferroelectric thin films on diamond substrates by a simple sol-gel process. The PZT thin films exhibited good surface morphological, structural and electrical characteristics. The electrical measurements were conducted on PZT films in metal-ferroelectric-metal (MFM) capacitor configuration. The typical remanent polarization and coercive electric field values were 5.1 μC/cm2 and 70.0 kV/cm, respectively, at an applied electric field of 300 kV/cm. The low leakage current of 10-8 A/cm2 was found at an applied electric field of 120 kV/cm.

AB - We firstly report the successful deposition of highly oriented Pb(Zr0.52Ti0.48)O3 (PZT) ferroelectric thin films on diamond substrates by a simple sol-gel process. The PZT thin films exhibited good surface morphological, structural and electrical characteristics. The electrical measurements were conducted on PZT films in metal-ferroelectric-metal (MFM) capacitor configuration. The typical remanent polarization and coercive electric field values were 5.1 μC/cm2 and 70.0 kV/cm, respectively, at an applied electric field of 300 kV/cm. The low leakage current of 10-8 A/cm2 was found at an applied electric field of 120 kV/cm.

KW - Diamond

KW - Ferroelectric thin films

KW - Pb(ZrTi)O

KW - Sol-gel

KW - Surface acoustic wave

UR - https://www.scopus.com/pages/publications/0033100934

U2 - 10.1016/S0022-0248(98)01024-0

DO - 10.1016/S0022-0248(98)01024-0

M3 - 文章

AN - SCOPUS:0033100934

SN - 0022-0248

VL - 197

SP - 874

EP - 878

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 4

ER -

Structural and electrical characteristics of oriented Pb(Zr0.52Ti0.48)O3 ferroelectric thin films deposited on diamond substrates by a simple sol-gel process

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Structural and electrical characteristics of oriented Pb(Zr_0.52Ti_0.48)O₃ ferroelectric thin films deposited on diamond substrates by a simple sol-gel process