Strong spin-orbit interactions in an inalas/ingaas/inalas two-dimensional electron gas by weak antilocalization analysis

Spin-orbit interactions in a two-dimensional electron gas were studied in an InAlAs/InGaAs/InAlAs quantum well. Since weak antilocalization effects take place far beyond the diffusive regime, (i.e., the ratio of the characteristic magnetic field, at which the magnetoresistance correction maximum occurs, to the transport magnetic field is more than ten) the experimental data are examined by the Golub theory, which is applicable to both diffusive regime and ballistic regime. Satisfactory fitting lines to the experimental data have been achieved using the Golub theory. In the strong spin-orbit interaction two-dimensional electron gas system, the large spin splitting energy of 6.08meV is observed mainly due to the high electron concentration in the quantum well. The temperature dependence of the phase-breaking rate is qualitatively in agreement with the theoretical predictions.