摘要
Moiré superlattices characterized by their atomic-scale sliding ferroelectric (FE) ordering and tunable interfacial polarization properties have emerged as attractive building blocks for post-Moore's law electronics. However, its topological protection from domain wall networks results in antiferroelectric (AFE) volatile characteristics, a fundamental obstacle to practical device applications. Here, utilizing twisted boron nitride as a model system, we propose a regulation strategy based on mechanical stress engineering, which drives a domain wall transition from Σ0° to Σ30° configurations. Through this approach, the applied stress breaks the balance between anti-aligned dipoles and generates a double domain wall, therefore establishing a net out-of-plane polarization. Our approach achieves a phase transition from AFE to FE order, enabling stable nonvolatile polarization switching and paving the way for developing practical low-power nonvolatile memory devices based on moiré platforms.
| 源语言 | 英语 |
|---|---|
| 期刊 | Advanced Functional Materials |
| DOI | |
| 出版状态 | 已接受/待刊 - 2026 |
指纹
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